INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT STD 600V 50A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT UFAST 600V 40A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)