Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features

• Switching-loss rating includes all tail losses

• Optimized for line frequency operation (to 400 Hz)

See Fig. 1 for Current vs. Frequency curve