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IRGBC30价格
参考价格：￥96.0351
型号：IRGBC30U 品牌：Int'L Rectifier 备注：这里有IRGBC30多少钱，2025年最近7天走势，今日出价，今日竞价，IRGBC30批发/采购报价，IRGBC30行情走势销售排行榜，IRGBC30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGBC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF |   | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A) Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host o | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A) Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A) Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT W/DIODE 600V 31A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A) | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) | Infineon 英飞凌 | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT | Infineon 英飞凌 | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A) 文件：425.74 Kbytes Page：8 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT STD 600V 34A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | |
IRGBC30产品属性
- 类型
描述
- 型号
IRGBC30
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
|||
IR |
24+ |
TO220 |
60000 |
||||
IR |
NEW |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
23+ |
TO220 |
7000 |
||||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
14505 |
安罗世纪电子只做原装正品货 |
|||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
TO-220 |
88464 |
||||
IR |
24+ |
TO 220 |
161447 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRGBC30规格书下载地址
IRGBC30参数引脚图相关
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- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
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DdatasheetPDF页码索引
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