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IRGBC30价格
参考价格：￥96.0351
型号：IRGBC30U 品牌：Int'L Rectifier 备注：这里有IRGBC30多少钱，2024年最近7天走势，今日出价，今日竞价，IRGBC30批发/采购报价，IRGBC30行情走势销售排行榜，IRGBC30报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGBC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahosto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT W/DIODE 600V 31A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A) 文件：425.74 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT STD 600V 34A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRGBC30产品属性
- 类型
描述
- 型号
IRGBC30
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2019 |
TO-220AB |
55000 |
原装进口假一罚十 |
|||
IR |
23+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
|||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
|||
IR |
23+ |
TO-220 |
35890 |
||||
IR |
22+ |
TO-220 |
7000 |
绝对全新原装现货 |
|||
IR |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IR |
21+ROHS |
TO |
13800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
2022+ |
TO220AB |
6680 |
原厂原装，欢迎咨询 |
|||
IR |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
22+ |
TO-220 |
88464 |
终端免费提供样品 可开13%增值税发票 |
IRGBC30芯片相关品牌
IRGBC30规格书下载地址
IRGBC30参数引脚图相关
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IRGBC30数据表相关新闻
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DdatasheetPDF页码索引
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