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INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:440.81 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:440.81 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:440.81 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:296.88 Kbytes Page:10 Pages

IRF

更新时间:2026-1-6 8:40:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
21+
TO-247
10000
原装现货假一罚十
IR
22+
TO-247
89771
INFINEON/英飞凌
23+
TO-247
89630
当天发货全新原装现货
IR
24+
TO-247
47186
郑重承诺只做原装进口现货
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
13+
TO-247
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
25+
TO-247AD
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Infineon
24+
NA
3574
进口原装正品优势供应
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
IR
23+
TO-247
50000
全新原装正品现货,支持订货

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