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IRG4PC50UD-E价格
参考价格：￥28.6535
型号：IRG4PC50UD-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PC50UD-E多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50UD-E批发/采购报价，IRG4PC50UD-E行情走势销售排行榜，IRG4PC50UD-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 55A 200W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 |   | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design | IRF | |
IRG4PC50UD-E产品属性
- 类型
描述
- 型号
IRG4PC50UD-E
- 制造商
International Rectifier
- 功能描述
IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
24+ |
TO-247-3 |
70 |
||||
IR |
18+ |
TO247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
IR |
07+ |
原厂原装 |
9225 |
自己公司全新库存绝对有货 |
|||
IR原装 |
24+ |
TO-247 |
30980 |
原装现货/放心购买 |
|||
Infineon(英飞凌) |
2447 |
TO-247 |
105000 |
25个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
1923+ |
T0247 |
5689 |
原装进口现货库存专业工厂研究所配单供货 |
IRG4PC50UD-E芯片相关品牌
IRG4PC50UD-E规格书下载地址
IRG4PC50UD-E参数引脚图相关
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- IRG4PH50S-EPBF
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- IRG4PF50WPBF
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- IRG4PC60UPBF
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- IRG4PC50UD-EPBF
- IRG4PC50SPBF
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- IRG4PC40UDPBF
- IRG4PC40UD-EPBF
- IRG4PC40SPBF
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- IRFZ48Z
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- IRFZ44E
IRG4PC50UD-E数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17
DdatasheetPDF页码索引
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