Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in s

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

55V N-Channel MOSFET

DESCRIPTION This advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

60V N-Channel MOSFET

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N-channel enhancement mode TrenchMOS™ transistor

60V N-Channel Power MOSFET

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

ADVANCED PROCESS TECHNOLOGY

文件：340.05 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：340.05 Kbytes Page：11 Pages