AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m廓 , ID = 42A )

VDSS = 55V RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

isc N-Channel MOSFET Transistor

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Advanced Process Technology

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AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET

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THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

Features • Output current in excess of 1.0 A • Low dropout voltage VDIF = 0.7 V TYP. (IO = 1 A) • On-chip over-current and thermal protection circuit • On-chip output transistor safe operating area protection circuit

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2905 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

140 MHz Center Frequency

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ADSL LINE TRANSFORMER

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CPRI and 10G Ethernet Data Recovery IC with Amp/EQ from 614.4 Mbps to 10.3125 Gbps

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