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IRFU2905Z中文资料
IRFU2905Z数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 14.5mΩ
ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRFU2905Z产品属性
- 类型
描述
- 型号
IRFU2905Z
- 功能描述
MOSFET N-CH 55V 42A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
1415+ |
TO-251 |
28500 |
全新原装正品,优势热卖 |
|||
IR |
24+ |
原厂封装 |
530 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
25+ |
TO-251 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
23+ |
I-Pak |
89630 |
当天发货全新原装现货 |
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