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IRFS9N60A价格
参考价格：￥6.6294
型号：IRFS9N60APBF 品牌：Vishay 备注：这里有IRFS9N60A多少钱，2025年最近7天走势，今日出价，今日竞价，IRFS9N60A批发/采购报价，IRFS9N60A行情走势销售排行榜，IRFS9N60A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS9N60A | SMPS MOSFET Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High Speed Power Sw | IRF |   | |
IRFS9N60A | Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | |
IRFS9N60A | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFS9N60A | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世威世科技公司 | | |
IRFS9N60A | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High Speed Power Sw | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：223.37 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel Mosfet Transistor DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D | ISC 无锡固电 | | ||
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power | IRF | | ||
N-channel Enhancement Mode Power MOSFET 文件：374.44 Kbytes Page：6 Pages | ESTEK 伊泰克电子 | | ||
N-Channel MOSFET 文件：784.87 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
N-Channel MOSFET 文件：784.87 Kbytes Page：8 Pages | Fairchild 仙童半导体 | |
IRFS9N60A产品属性
- 类型
描述
- 型号
IRFS9N60A
- 功能描述
MOSFET N-Chan 600V 9.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
0432+ |
TO-263 |
72 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR/VISHAY |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
24+/25+ |
D2-PAK(TO-263) |
1800 |
原装正品现货库存价优 |
|||
VISHAY/威世 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
NEW |
D2-Pak |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY |
25+23+ |
TO-263 |
28523 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2015+ |
D2-Pak |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
IRFS9N60A芯片相关品牌
IRFS9N60A规格书下载地址
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2020-11-23
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