IRFR9220TR价格

参考价格:¥3.4408

型号:IRFR9220TRLPBF 品牌:Vishay / Semiconductor 备注:这里有IRFR9220TR多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR9220TR批发/采购报价,IRFR9220TR行情走势销售排行榜,IRFR9220TR报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR9220TR

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

VishayVishay Siliconix

威世科技威世科技半导体

IRFR9220TR

Dynamic dV/dt Rating

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

VishayVishay Siliconix

威世科技威世科技半导体

Dynamic dV/dt Rating

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

VishayVishay Siliconix

威世科技威世科技半导体

Dynamic dV/dt Rating

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Dynamic dV/dt Rating

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

VishayVishay Siliconix

威世科技威世科技半导体

Dynamic dV/dt Rating

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is

KERSEMI

Power MOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Complete 12-Bit 1.5/3.0/10.0 MSPS ithic A/D Converters

GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t

AD

亚德诺

Complete 12-Bit 1.5/3.0/10.0 MSPS Monolithic A/D Converters

GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t

AD

亚德诺

Programmable RambusTM XDRTM Clock Generator

文件:192.16 Kbytes Page:16 Pages

IDT

Programmable RambusTM XDRTM Clock Generator

文件:192.16 Kbytes Page:16 Pages

IDT

Complete 12-Bit 1.5/3.0/10.0 MSPS olithic A/D Converters

文件:412.8 Kbytes Page:32 Pages

AD

亚德诺

IRFR9220TR产品属性

  • 类型

    描述

  • 型号

    IRFR9220TR

  • 功能描述

    MOSFET P-Chan 200V 3.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-14 17:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-252
30000
房间原装现货特价热卖,有单详谈
VISHAY/威世
24+
TO-252
10000
渠道现货欢迎来询
ST/意法
00+
TO-252
1785
IR/国际整流器
23+
TO-252-2
12700
买原装认准中赛美
VISHAY/威世
23+
TO-252
22000
原装现货假一罚十
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
VISHAY
两年内
NA
168
实单价格可谈
IR
24+
TO-252
501003
免费送样原盒原包现货一手渠道联系
VISHAY
24+
TO-220
12000
VISHAY专营进口原装现货假一赔十
Vishay(威世)
24+
TO-252(DPAK)
13048
原厂可订货,技术支持,直接渠道。可签保供合同

IRFR9220TR数据表相关新闻