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IRFR9220价格
参考价格：￥5.0979
型号：IRFR9220PBF 品牌：VISHAY 备注：这里有IRFR9220多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9220批发/采购报价，IRFR9220行情走势销售排行榜，IRFR9220报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | INTERSIL |   | |
IRFR9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) DESCRIPTION The HEXFE technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. FEATURES • | IRF | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR9220 | P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -3.6A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive. | ISC 无锡固电 | | |
IRFR9220 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET 文件：1.08269 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A) HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling | IRF | | ||
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | INTERSIL | | ||
Analog Signal Processing Circuit (ASP) for CD players Overview The LA9220M is an analog signal processing and servo control bipolar IC designed for use in compact disc players ; a compact disc player can be configured by combining this IC, a CD-DSP such as the LC78681KE, and a small number of additional components. Features The following automatic | SANYO 三洋 | | ||
Advanced Power MOSFET 文件：257.459 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
IRFR9220产品属性
- 类型
描述
- 型号
IRFR9220
- 功能描述
MOSFET P-Chan 200V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2025+ |
TO-252 |
344 |
原装进口价格优 请找坤融电子! |
|||
VISHAY SEMICONDUCTOR |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
19+ |
SOT-252 |
27312 |
||||
25+ |
TO-263 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
||||
Vishay |
25+ |
原装优势现货 |
18000 |
原装优势现货 |
|||
IR |
2025+ |
TO-252 |
344 |
原装正品 询价请发QQ |
|||
VISHAY |
2021+ |
DPAK |
9450 |
原装现货。 |
|||
IR |
23+ |
TO-252 |
10000 |
正规渠道,只有原装! |
|||
ONSEMI |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
IRFR9220规格书下载地址
IRFR9220参数引脚图相关
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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