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IRFR9220价格
参考价格：￥5.0979
型号：IRFR9220PBF 品牌：VISHAY 备注：这里有IRFR9220多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9220批发/采购报价，IRFR9220行情走势销售排行榜，IRFR9220报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | Intersil |   | |
IRFR9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) DESCRIPTION The HEXFE technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. FEATURES • | IRF | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | |
IRFR9220 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR9220 | P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -3.6A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive. | ISC 无锡固电 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9220, SiHFR9220) • Straight lead (IRFUFU9220, SiHFU9220) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
HEXFET짰 Power MOSFET 文件：1.08269 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS ithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS Monolithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | | ||
Programmable RambusTM XDRTM Clock Generator 文件：192.16 Kbytes Page：16 Pages | IDT | | ||
Programmable RambusTM XDRTM Clock Generator 文件：192.16 Kbytes Page：16 Pages | IDT | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS olithic A/D Converters 文件：412.8 Kbytes Page：32 Pages | AD 亚德诺 | |
IRFR9220产品属性
- 类型
描述
- 型号
IRFR9220
- 功能描述
MOSFET P-Chan 200V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
IR |
24+ |
TO252 |
48650 |
优势价格公司库存~!! |
|||
VISHAY/威世 |
24+ |
TO-252 |
10000 |
渠道现货欢迎来询 |
|||
IR |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
25+ |
SOT-252 |
32000 |
IR全新特价IRFR9220PBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
IR |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY/威世 |
23+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
24+ |
TO-252 |
501743 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY SEMICONDUCTOR |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
IRFR9220规格书下载地址
IRFR9220参数引脚图相关
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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