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IRFR9220T价格
参考价格：￥3.4408
型号：IRFR9220TRLPBF 品牌：Vishay / Semiconductor 备注：这里有IRFR9220T多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9220T批发/采购报价，IRFR9220T行情走势销售排行榜，IRFR9220T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 |   | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is | KERSEMI | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS ithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS Monolithic A/D Converters GENERAL DESCRIPTION The AD9221, AD9223, and AD9220 are a generation of high performance, single supply 12-bit analog-to-digital converters. Each device exhibits true 12-bit linearity and temperature drift performance1 as well as 11.5-bit or better ac performance.2 The AD9221/AD9223/AD9220 share t | AD 亚德诺 | | ||
Programmable RambusTM XDRTM Clock Generator 文件：192.16 Kbytes Page：16 Pages | IDT | | ||
Programmable RambusTM XDRTM Clock Generator 文件：192.16 Kbytes Page：16 Pages | IDT | | ||
Complete 12-Bit 1.5/3.0/10.0 MSPS olithic A/D Converters 文件：412.8 Kbytes Page：32 Pages | AD 亚德诺 | |
IRFR9220T产品属性
- 类型
描述
- 型号
IRFR9220T
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY |
25+23+ |
TO-252 |
27846 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
NEW |
D-PAK |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
IR |
08+ |
10000 |
普通 |
||||
IR |
21+ |
TO252 |
10000 |
原装现货假一罚十 |
|||
IR |
05+ |
TO-252 |
15000 |
原装进口 |
IRFR9220T规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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