IRFR9210TR价格

参考价格:¥1.9310

型号:IRFR9210TRPBF 品牌:Vishay 备注:这里有IRFR9210TR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR9210TR批发/采购报价,IRFR9210TR行情走势销售排行榜,IRFR9210TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR9210TR

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

VishayVishay Siliconix

威世威世科技公司

IRFR9210TR

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:891.33 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:891.33 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:891.33 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Drive Fasteners

文件:93.97 Kbytes Page:1 Pages

Heyco

ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES

文件:173.83 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRFR9210TR产品属性

  • 类型

    描述

  • 型号

    IRFR9210TR

  • 功能描述

    MOSFET P-Chan 200V 1.9 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
TO-252
880000
明嘉莱只做原装正品现货
IR
25+23+
TO-252
34082
绝对原装正品全新进口深圳现货
IR
25+
TO-252
4500
全新原装、诚信经营、公司现货销售
VISHAY/威世
2025+
NA
674
原装进口价格优 请找坤融电子!
IR
24+
TO-252
36800
IRFR9210TRL
25+
1050
1050
VISHAY(威世)
24+
TO-252
9203
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
23+
TO-252
5715
只做原装假一罚十
VISHAY
19+
TO-252
16318
VISHAY/威世
24+
TO-252
47186
郑重承诺只做原装进口现货

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