位置:IRFR9210TRL > IRFR9210TRL详情

IRFR9210TRL中文资料

厂家型号

IRFR9210TRL

文件大小

4458.42Kbytes

页面数量

7

功能描述

Power MOSFET

MOSFET P-Chan 200V 1.9 Amp

数据手册

下载地址一下载地址二

生产厂商

KERSEMI

IRFR9210TRL数据手册规格书PDF详情

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR9210/SiHFR9210)

• Straight Lead (IRFU9210/SiHFU9210)

• Available in Tape and Reel

• P-Channel

• Fast Switching

• Lead (Pb)-free Available

IRFR9210TRL产品属性

  • 类型

    描述

  • 型号

    IRFR9210TRL

  • 功能描述

    MOSFET P-Chan 200V 1.9 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-2-15 16:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
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IR
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IR
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就找我吧!--邀您体验愉快问购元件!
IR
23+
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IR
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IRFR9210TRL
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1050
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23+
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原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
2023+环保现货
TO-252
18000
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