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IRFR9110价格
参考价格：￥1.7163
型号：IRFR9110PBF 品牌：VISHAY 备注：这里有IRFR9110多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9110批发/采购报价，IRFR9110行情走势销售排行榜，IRFR9110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9110 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI |   | |
IRFR9110 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR9110 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9110 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -3.1A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IRFR9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching | Intersil | | |
IRFR9110 | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec | IRF | | |
IRFR9110 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9110 | isc P-Channel MOSFET Transistor 文件：321 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR9110 | Power MOSFET 文件：792.48 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9110 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9110 | HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A | Infineon 英飞凌 | | |
IRFR9110 | Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. | IRF | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -13A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：792.48 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
MEASURING WHEEL Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C | Sensata 森萨塔 | | ||
ROUND INSTRUMENTATION HANDLES [KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SHIELDED ADJUSTABLE RF COILS [J.W.MILLER] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Multi-Range 60 V DC Power Supplies 文件：726.58 Kbytes Page：1 Pages | BK B&K Precision Corporation | | ||
Releasable Type T Rivets 文件：117.9 Kbytes Page：1 Pages | Heyco | |
IRFR9110产品属性
- 类型
描述
- 型号
IRFR9110
- 功能描述
MOSFET P-Chan 100V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAM |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
FAIRCHI |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
01+ |
SOT252/2.5 |
5600 |
全新原装进口自己库存优势 |
|||
VISHAY/威世 |
25+ |
TO-252DPAK |
32360 |
VISHAY/威世全新特价IRFR9110即刻询购立享优惠#长期有货 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
24+/25+ |
D-PAK(TO-252) |
4000 |
原装正品现货库存价优 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
IRFR9110 |
25+ |
2525 |
2525 |
||||
VISHAY |
23+24 |
TO-252 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
20000 |
IRFR9110规格书下载地址
IRFR9110参数引脚图相关
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- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
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- IRFR012
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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