3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -3.1A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A

isc P-Channel MOSFET Transistor

文件：321 Kbytes Page：2 Pages

Power MOSFET

文件：792.48 Kbytes Page：11 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

文件：792.48 Kbytes Page：11 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to