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IRFR9110TR价格
参考价格：￥1.7836
型号：IRFR9110TRPBF 品牌：Vishay 备注：这里有IRFR9110TR多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9110TR批发/采购报价，IRFR9110TR行情走势销售排行榜，IRFR9110TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9110TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR9110TR | Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：3.76945 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：845.12 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
ROUND INSTRUMENTATION HANDLES [KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MEASURING WHEEL Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C | Sensata 森萨塔 | | ||
SHIELDED ADJUSTABLE RF COILS [J.W.MILLER] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Multi-Range 60 V DC Power Supplies 文件：726.58 Kbytes Page：1 Pages | BK B&K Precision Corporation | | ||
Releasable Type T Rivets 文件：117.9 Kbytes Page：1 Pages | Heyco | |
IRFR9110TR产品属性
- 类型
描述
- 型号
IRFR9110TR
- 功能描述
MOSFET P-Chan 100V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-252 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
IR |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
IR |
25+ |
TO-252 |
86910 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
20000 |
||||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
VISHAY |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
25+ |
TO-252 |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-252 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
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IRFR9110TR规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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