IRFR9110TR价格

参考价格:¥1.7836

型号:IRFR9110TRPBF 品牌:Vishay 备注:这里有IRFR9110TR多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR9110TR批发/采购报价,IRFR9110TR行情走势销售排行榜,IRFR9110TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR9110TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世威世科技公司

IRFR9110TR

Dynamic dV/dt Rating

文件:3.76945 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Dynamic dV/dt Rating

文件:3.76945 Mbytes Page:7 Pages

KERSEMI

Dynamic dV/dt Rating

文件:3.76945 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:845.12 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Dynamic dV/dt Rating

文件:3.76945 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:845.12 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:845.12 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Dynamic dV/dt Rating

文件:3.76945 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:845.12 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

ETCList of Unclassifed Manufacturers

未分类制造商

MEASURING WHEEL

Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C

Sensata

森萨塔

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

ETCList of Unclassifed Manufacturers

未分类制造商

Multi-Range 60 V DC Power Supplies

文件:726.58 Kbytes Page:1 Pages

BK

B&K Precision Corporation

Releasable Type T Rivets

文件:117.9 Kbytes Page:1 Pages

Heyco

IRFR9110TR产品属性

  • 类型

    描述

  • 型号

    IRFR9110TR

  • 功能描述

    MOSFET P-Chan 100V 3.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-31 16:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
TO-252
5715
只做原装 有挂有货 假一罚十
INFINEON/英飞凌
24+
TO-252
5000
全新原装正品,现货销售
IR
17+
TO-252
6200
100%原装正品现货
IR
25+
TO-252
86910
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
INFINEON/英飞凌
23+
TO-252
20000
IR
18+
TO-252
85600
保证进口原装可开17%增值税发票
VISHAY
NA
16355
一级代理 原装正品假一罚十价格优势长期供货
IR
25+
TO-252
2679
原装优势!绝对公司现货!可长期供货!
IR
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
24+
TO-252
4500
只做原装正品现货 欢迎来电查询15919825718

IRFR9110TR数据表相关新闻