INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

Military Managed 24-Port 1G Ethernet Router/Switch

FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha

包装：散装 描述：BRD SPT SNAP LOCK NYLON 3/4\ 五金件，紧固件，配件 电路板支座

包装：散装 描述：WR RAT COMB 3/4 工具 扳手

Snap Rivets

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1000V CERAMIC DISC

1000V CERAMIC DISC The 90000 series is a range of insulated disc, monolythic fixed ceramic capacitors. They are most commonly used in consumer electronics and telecommunication equipment.

1000V CERAMIC DISC

1000V CERAMIC DISC The 90000 series is a range of insulated disc, monolythic fixed ceramic capacitors. They are most commonly used in consumer electronics and telecommunication equipment.

Reasons for reissue of this instruction sheet are provided in Section 7, REVISION SUMMARY.

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REED RELAY 1 FORM A 24V TH

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直插瓷片电容

直插瓷片电容

Reasons for reissue of this instruction sheet are provided in Section 7, REVISION SUMMARY.

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Snap Rivets

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板对板连接器

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)

Vdss=-60V Rds(on)=0.28Ω Id=-1.6A

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

Advanced Power MOSFET

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