位置：首页 > IC中文资料第870页 > IRFR9020
IRFR9020价格
参考价格：￥2.8076
型号：IRFR9020PBF 品牌：Vishay 备注：这里有IRFR9020多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9020批发/采购报价，IRFR9020行情走势销售排行榜，IRFR9020报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET | IRF |   | |
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | |
IRFR9020 | Power MOSFET FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9020 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -9.9A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IRFR9020 | isc P-Channel MOSFET Transistor 文件：321.01 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR9020 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Receiver and Transmitter Interface ACE9020 is a VHF oscillator, up-converter and prescaler. It is used in an offset modulated transmit architecture where a UHF synthesiser makes the channel selection and a second synthesiser generates a fixed transmit offset. A VCO signal drives a buffer in ACE9020 to feed an on chip prescaler and | Mitel | | ||
IGBT Basic II 文件：389.5 Kbytes Page：25 Pages | Fairchild 仙童半导体 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | Heyco | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | Heyco | |
IRFR9020产品属性
- 类型
描述
- 型号
IRFR9020
- 功能描述
MOSFET P-Chan 50V 9.9 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
IR |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Vishay(威世) |
23+ |
NA |
11800 |
||||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
05+ |
原厂原装 |
4764 |
只做全新原装真实现货供应 |
|||
IR |
23+ |
SOT-252 |
5000 |
原装正品,假一罚十 |
|||
IR |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IOR |
25+ |
TO-252 |
2987 |
绝对全新原装现货供应! |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-252 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
IRFR9020芯片相关品牌
IRFR9020规格书下载地址
IRFR9020参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFU014
- IRFU012
- IRFU010
- IRFS840
- IRFS830
- IRFS750
- IRFS740
- IRFS730
- IRFS720
- IRFS654
- IRFS641
- IRFS640
- IRFS634
- IRFS630
- IRFS540
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFRC20
- IRFR9210PBF
- IRFR9120TRPBF
- IRFR9120TRLPBF
- IRFR9120PBF
- IRFR9120NTRPBF
- IRFR9120NTRLPBF
- IRFR9120NPBF
- IRFR9110TRPBF
- IRFR9110PBF
- IRFR9024TRPBF-CUTTAPE
- IRFR9024TRPBF
- IRFR9024TRLPBF
- IRFR9024PBF
- IRFR9024NTRRPBF
- IRFR9024NTRPBF-CUTTAPE
- IRFR9024NTRPBF
- IRFR9024NTRLPBF
- IRFR9024NPBF
- IRFR9020TRPBF
- IRFR9020PBF
- IRFR9014TRPBF-CUTTAPE
- IRFR9014TRPBF
- IRFR9014TRLPBF
- IRFR9014PBF
- IRFR9010TRPBF
- IRFR9010TR
- IRFR9010PBF
- IRFR8314TRPBF
- IRFR825TRPBF
- IRFR825
- IRFR812TRPBF
- IRFR812PBF
- IRFR812
- IRFR7746TRPBF
- IRFR7746PBF
- IRFR7740TRPBF
- IRFR7740PBF
- IRFR7546TRPBF
- IRFR7546PBF
- IRFR7540TRPBF
- IRFR7540PBF
- IRFR7446TRPBF
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
IRFR9020数据表相关新闻
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
2021-12-6IRFR9014TRPBF产品种类:MOSFET
IRFR9014TRPBF
2021-9-17IRFR9024NTRPBF公司原装正品现货
IRFR9024NTRPBF公司原装正品现货
2019-8-8IRFR5410TRPBF原装现货
IRFR5410TRPBF正品支持验货
2019-7-26IRFS38N20D进口原装现货
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30IRFR5410TRPBF进口原装假一赔十
瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
