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IRFR9020价格
参考价格：￥2.8076
型号：IRFR9020PBF 品牌：Vishay 备注：这里有IRFR9020多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9020批发/采购报价，IRFR9020行情走势销售排行榜，IRFR9020报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET | IRF |   | |
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | |
IRFR9020 | Power MOSFET FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9020 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -9.9A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IRFR9020 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9020 | isc P-Channel MOSFET Transistor 文件：321.01 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Receiver and Transmitter Interface ACE9020 is a VHF oscillator, up-converter and prescaler. It is used in an offset modulated transmit architecture where a UHF synthesiser makes the channel selection and a second synthesiser generates a fixed transmit offset. A VCO signal drives a buffer in ACE9020 to feed an on chip prescaler and | Mitel | | ||
IGBT Basic II 文件：389.5 Kbytes Page：25 Pages | Fairchild 仙童半导体 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | Heyco | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | Heyco | |
IRFR9020产品属性
- 类型
描述
- 型号
IRFR9020
- 功能描述
MOSFET P-Chan 50V 9.9 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
23+ |
SOT-252 |
5000 |
原装正品,假一罚十 |
|||
IR |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
25+ |
TO252 |
1030 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
23+ |
TRANSISTOR |
65480 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SAMSUNG |
NEW |
TRANSISTOR |
12335 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRFR9020规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30IRFR5410TRPBF进口原装假一赔十
瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
DdatasheetPDF页码索引
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