REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -9.9A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

isc P-Channel MOSFET Transistor

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Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

Power MOSFET

Power MOSFET

文件：1.79663 Mbytes Page：13 Pages

Power MOSFET

文件：1.79663 Mbytes Page：13 Pages

Power MOSFET

文件：1.79663 Mbytes Page：13 Pages

Power MOSFET

文件：1.79663 Mbytes Page：13 Pages

10-Bit 60 MSPS A/D Converter

GENERAL DESCRIPTION The AD9020 A/D converter is a 10-bit monolithic converter capable of word rates of 60 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. E

10-Bit 60 MSPS A/D Converter

GENERAL DESCRIPTION The AD9020 A/D converter is a 10-bit monolithic converter capable of word rates of 60 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. E

10-Bit 60 MSPS A/D Converter

GENERAL DESCRIPTION The AD9020 A/D converter is a 10-bit monolithic converter capable of word rates of 60 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. E

1, 2, and 4k bit EEPROMs for direct connection to serial ports

• Overview The BR90 series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs through CS, SK, DI, and DO pins, WC pin control is

1, 2, and 4k bit EEPROMs for direct connection to serial ports

• Overview The BR90 series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs through CS, SK, DI, and DO pins, WC pin control is