IRFR9020TR价格

参考价格:¥3.8440

型号:IRFR9020TRPBF 品牌:Vishay 备注:这里有IRFR9020TR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR9020TR批发/采购报价,IRFR9020TR行情走势销售排行榜,IRFR9020TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR9020TR

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

KERSEMI

Power MOSFET

文件:1.79663 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.79663 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.79663 Mbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

ETCList of Unclassifed Manufacturers

未分类制造商

Receiver and Transmitter Interface

ACE9020 is a VHF oscillator, up-converter and prescaler. It is used in an offset modulated transmit architecture where a UHF synthesiser makes the channel selection and a second synthesiser generates a fixed transmit offset. A VCO signal drives a buffer in ACE9020 to feed an on chip prescaler and

Mitel

IGBT Basic II

文件:389.5 Kbytes Page:25 Pages

Fairchild

仙童半导体

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

IRFR9020TR产品属性

  • 类型

    描述

  • 型号

    IRFR9020TR

  • 功能描述

    MOSFET P-Chan 50V 9.9 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
25+23+
TO252
13397
绝对原装正品全新进口深圳现货
IR
22+
TO-252
8000
原装正品支持实单
IR
24+
TO-252
36800
VISHAY(威世)
24+
TO-252
9203
支持大陆交货,美金交易。原装现货库存。
IR
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
Vishay(威世)
23+
NA
11800
IR
23+
SOT-252
5000
原装正品,假一罚十
IR
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
2023+
TO-252
50000
原装现货
IR
23+
TO-252
8000
只做原装现货

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