P-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Power MOSFET

DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

Power MOSFET

isc P-Channel MOSFET Transistor

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Power MOSFET

DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

P-Channel 60-V (D-S) MOSFET

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BALUN 75/120 BNC F KRONE IDC

SPECIFICATIONS; MATERIALS; BODY: BRASS INNER CONTACT: PHOSPHORUS BRONZE INSULATOR: PTFE OUTER SLEEVE & BASE MOLDING: NORYL, BLACK IDC MOLDING: POLYESTER, WHITE FINISH; BODY: NICKEL PLATE CONTACT: GOLD PLATE IDC CONTACTS: SILVER PLATE ELECTRICAL; CHARACTERISTIC IMPEDANCE: 75 OH

4 x E1/T1 Fiber Mux/De-mux over One Fiber Optic Cable

DESCRIPTION The ACS406CS comprises a chip set of two highly integrated devices, the ACS9010 and ACS4060. The ACS9010 is an analog transceiver device and the ACS4060 is a mixed signal device. FEATURES • Two chip set supporting full duplex serial data transmission up to 8.448Mbps over one fiber

Heyco® Self-Closing Braided Sleeving

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900 MHz ISM Band Analog RF Front End

文件：481.84 Kbytes Page：28 Pages

900 MHz ISM Band Analog RF Front End

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