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IRFR48Z价格
参考价格：￥3.0855
型号：IRFR48ZPBF 品牌：International 备注：这里有IRFR48Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR48Z批发/采购报价，IRFR48Z行情走势销售排行榜，IRFR48Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR48Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF |   | |
IRFR48Z | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤11mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFR48Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repet | KERSEMI | | |
IRFR48Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repet | KERSEMI | | |
IRFR48Z | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装 | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repet | KERSEMI | | ||
N-Channel Enhancement Mode MOSFET Application » Adaptor « Charger « Power management o SMPS Standby Power | TECHPUBLIC 台舟电子 | | ||
N-Channel Enhancement Mode MOSFET Application » Adaptor « Charger « Power management o SMPS Standby Power | TECHPUBLIC 台舟电子 | | ||
Advanced Process Technology 文件：1.25203 Mbytes Page：12 Pages | KERSEMI | | ||
Advanced Process Technology 文件：353.83 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：353.83 Kbytes Page：11 Pages | IRF | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.09686 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
IRFR48Z产品属性
- 类型
描述
- 型号
IRFR48Z
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
IR |
TO252 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
IR |
2016+ |
TO252 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Infineon/英飞凌 |
24+ |
DPAK |
25000 |
原装正品,假一赔十! |
|||
最新 |
2000 |
原装正品现货 |
|||||
Infineon(英飞凌) |
2447 |
DPAK |
115000 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IR |
23+ |
D-PAK |
7300 |
专注配单,只做原装进口现货 |
IRFR48Z规格书下载地址
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2018-12-28
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