IRFR320价格

参考价格:¥2.4181

型号:IRFR320 品牌:Samsung 备注:这里有IRFR320多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR320批发/采购报价,IRFR320行情走势销售排行榜,IRFR320报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR320

3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Intersil

IRFR320

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

IRFR320

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999

VishayVishay Siliconix

威世科技

IRFR320

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface mount (IRFR320) • Str

IRF

IRFR320

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

IRFR320

N-Channel MOSFET uses advanced trench technology

文件:1.28083 Mbytes Page:5 Pages

DOINGTER

杜因特

IRFR320

Power MOSFET

VishayVishay Siliconix

威世科技

IRFR320

iscN-Channel MOSFET Transistor

文件:332.77 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999

VishayVishay Siliconix

威世科技

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

isc N-Channel MOSFET Transistor

文件:321.32 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:321.32 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件:1.82962 Mbytes Page:10 Pages

IRF

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Celeron D Processor

文件:1.75778 Mbytes Page:82 Pages

Intel

英特尔

TACT SWITCHES

文件:327.77 Kbytes Page:3 Pages

E-SWITCH

Rectifier Diode

文件:370.14 Kbytes Page:3 Pages

Semikron

赛米控丹佛斯

SCREW TYPE SERIES

文件:323.12 Kbytes Page:1 Pages

DBLECTRO

Clock Oscillators

文件:143.97 Kbytes Page:3 Pages

OSCILENT

IRFR320产品属性

  • 类型

    描述

  • 型号

    IRFR320

  • 功能描述

    MOSFET N-Chan 400V 3.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 15:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IRF
25+
TO-252
2560
绝对原装!现货热卖!
VISHAY
25+
TO-252
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
VISHAY
24+
TO-252
20540
保证进口原装现货假一赔十
IR
06+
TO-252
15000
原装
VISHAY(威世)
24+
TO-252
9908
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
24+
TO-252
501754
免费送样原盒原包现货一手渠道联系
VISHAY/威世
25+
TO-252
13799
全新原装现货特价销售,欢迎来电查询
0339-
45
公司优势库存 热卖中!
IR
22+
TO-252
8000
原装正品支持实单
VISHAY
23+
TO-252-3 (DPAK)
10000
原装现货支持送检

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