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IRFR320价格
参考价格：￥2.4181
型号：IRFR320 品牌：Samsung 备注：这里有IRFR320多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR320批发/采购报价，IRFR320行情走势销售排行榜，IRFR320报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR320 | 3.1A,400V,1.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation |  |   |
IRFR320 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRFR320 | PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=3.1A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR320) •Str | IRF International Rectifier |  | |
IRFR320 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR320 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR320,SiHFR320) •Straightlead(IRFU320,SiHFU320) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?999 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR320 | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.28083 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
IRFR320 | iscN-ChannelMOSFETTransistor 文件：332.77 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR320,SiHFR320) •Straightlead(IRFU320,SiHFU320) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?999 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
iscN-ChannelMOSFETTransistor 文件：321.32 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：321.32 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFETPowerMOSFET 文件：1.82962 Mbytes Page：10 Pages | IRF International Rectifier | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SCREWTYPESERIES 文件：323.12 Kbytes Page：1 Pages | DBLECTRODB Lectro Inc 迪贝电子 |  | | |
RectifierDiode 文件：370.14 Kbytes Page：3 Pages | SemikronSemikron International 赛米控丹佛斯 |  | | |
ClockOscillators 文件：143.97 Kbytes Page：3 Pages | OSCILENT Oscilent Corporation |  | | |
CeleronDProcessor 文件：1.75778 Mbytes Page：82 Pages | IntelIntel Corporation 英特尔 |  | | |
TACTSWITCHES 文件：327.77 Kbytes Page：3 Pages | E-SWITCH E-switch |  | |
IRFR320产品属性
- 类型
描述
- 型号
IRFR320
- 功能描述
MOSFET N-Chan 400V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
24+ |
TO 252 |
155612 |
明嘉莱只做原装正品现货 |
|||
IR |
1950+ |
TO252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
06+ |
TO-252 |
15000 |
原装 |
|||
INFINEON/英飞凌 |
06+ |
TO-252 |
4 |
北京原装无铅现货 |
|||
IR |
23+ |
TO-252 |
12500 |
全新原装现货,假一赔十 |
|||
IR |
23+ |
NA |
400 |
专做原装正品,假一罚百! |
|||
VISHAY |
24+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
IRFR320芯片相关品牌
IRFR320规格书下载地址
IRFR320参数引脚图相关
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- l100
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- kse13005
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- k310
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- jumper
- jtag接口
- jk触发器
- j111
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- isd1420
- IRFS730
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- IRFS654
- IRFS641
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- IRFS634
- IRFS630
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- IRFS530
- IRFS510
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- IRFS250
- IRFRC20
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- IRFR3518PBF
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- IRFR3505TRPBF
- IRFR3505PBF
- IRFR3504ZTRPBF
- IRFR3504ZPBF
- IRFR3411TRPBF
- IRFR3411PBF
- IRFR3410TRPBF
- IRFR3410TRLPBF-CUTTAPE
- IRFR3410TRLPBF
- IRFR3410PBF
- IRFR3303TRPBF
- IRFR3303TR
- IRFR3303PBF
- IRFR330
- IRFR325
- IRFR320TRPBF-CUTTAPE
- IRFR320TRPBF
- IRFR320TRLPBF
- IRFR320TF
- IRFR320PBF
- IRFR310TRPBF
- IRFR310TRLPBF
- IRFR310PBF
- IRFR310BTM
- IRFR310
- IRFR2905ZTRPBF
- IRFR2905ZTRLPBF
- IRFR2905ZPBF
- IRFR2905ZHR
- IRFR24N15DTRPBF
- IRFR24N15DPBF
- IRFR2407TRPBF
- IRFR2407TRLPBF
- IRFR2407PBF
- IRFR2405TRPBF-CUTTAPE
- IRFR2405TRPBF
- IRFR2405TRLPBF
- IRFR2405PBF
- IRFR2307ZTRLPBF
- IRFR2307ZPBF
- IRFR230
- IRFR224TRPBF
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
IRFR320数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生电话19926428992QQ1924037095
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-4IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405PDF资料
2019-1-28
DdatasheetPDF页码索引
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