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IRFR320价格
参考价格：￥2.4181
型号：IRFR320 品牌：Samsung 备注：这里有IRFR320多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR320批发/采购报价，IRFR320行情走势销售排行榜，IRFR320报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR320 | 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Intersil |   | |
IRFR320 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR320 | Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface mount (IRFR320) • Str | IRF | | |
IRFR320 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR320 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR320 | N-Channel MOSFET uses advanced trench technology 文件：1.28083 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
IRFR320 | iscN-Channel MOSFET Transistor 文件：332.77 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
isc N-Channel MOSFET Transistor 文件：321.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：321.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
HEXFET Power MOSFET 文件：1.82962 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
SCREW TYPE SERIES 文件：323.12 Kbytes Page：1 Pages | DBLECTRO 迪贝电子 | | ||
Rectifier Diode 文件：370.14 Kbytes Page：3 Pages | Semikron 赛米控丹佛斯 | | ||
Clock Oscillators 文件：143.97 Kbytes Page：3 Pages | OSCILENT | | ||
Celeron D Processor 文件：1.75778 Mbytes Page：82 Pages | Intel 英特尔 | | ||
TACT SWITCHES 文件：327.77 Kbytes Page：3 Pages | E-SWITCH | |
IRFR320产品属性
- 类型
描述
- 型号
IRFR320
- 功能描述
MOSFET N-Chan 400V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
06+ |
TO-252 |
4 |
北京原装无铅现货 |
|||
IR |
1950+ |
TO252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
VISHAY |
24+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
24+ |
TO 252 |
155612 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
NA |
400 |
专做原装正品,假一罚百! |
|||
VISHAY/威世 |
24+ |
TO-252 |
501754 |
免费送样原盒原包现货一手渠道联系 |
|||
Vishay(威世) |
24+ |
TO-252-2(DPAK) |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
哈理斯 |
TO-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
TO-252 |
5000 |
只做原厂渠道 可追溯货源 |
IRFR320规格书下载地址
IRFR320参数引脚图相关
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- jumper
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- IRFS730
- IRFS720
- IRFS654
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- IRFRC20
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- IRFR812
- IRFR48Z
- IRFR420
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- IRFR3518PBF
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- IRFR3505TRPBF
- IRFR3505PBF
- IRFR3504ZTRPBF
- IRFR3504ZPBF
- IRFR3411TRPBF
- IRFR3411PBF
- IRFR3410TRPBF
- IRFR3410TRLPBF-CUTTAPE
- IRFR3410TRLPBF
- IRFR3410PBF
- IRFR3303TRPBF
- IRFR3303TR
- IRFR3303PBF
- IRFR330
- IRFR325
- IRFR320TRPBF-CUTTAPE
- IRFR320TRPBF
- IRFR320TRLPBF
- IRFR320TF
- IRFR320PBF
- IRFR310TRPBF
- IRFR310TRLPBF
- IRFR310PBF
- IRFR310BTM
- IRFR310
- IRFR2905ZTRPBF
- IRFR2905ZTRLPBF
- IRFR2905ZPBF
- IRFR2905ZHR
- IRFR24N15DTRPBF
- IRFR24N15DPBF
- IRFR2407TRPBF
- IRFR2407TRLPBF
- IRFR2407PBF
- IRFR2405TRPBF-CUTTAPE
- IRFR2405TRPBF
- IRFR2405TRLPBF
- IRFR2405PBF
- IRFR2307ZTRLPBF
- IRFR2307ZPBF
- IRFR230
- IRFR224TRPBF
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
IRFR320数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-4IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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