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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR320TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFR320TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | |||
Power MOSFET 文件:827.67 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Celeron D Processor 文件:1.75778 Mbytes Page:82 Pages | Intel 英特尔 | |||
TACT SWITCHES 文件:327.77 Kbytes Page:3 Pages | E-SWITCH | |||
Clock Oscillators 文件:143.97 Kbytes Page:3 Pages | OSCILENT | |||
SCREW TYPE SERIES 文件:323.12 Kbytes Page:1 Pages | DBLECTRO 迪贝电子 | |||
Rectifier Diode 文件:370.14 Kbytes Page:3 Pages | Semikron 赛米控丹佛斯 |
IRFR320TRR产品属性
- 类型
描述
- 型号
IRFR320TRR
- 功能描述
MOSFET N-Chan 400V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
36800 |
||||
IR |
1923+ |
TO-252 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
23+ |
TO252-2 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
VISHAY/威世 |
22+ |
TO252-2 |
8000 |
原装正品支持实单 |
|||
VISHAY |
2025+ |
TO252-2 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
IR |
0048+ |
TO-252 |
1950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
IRFR320TRR芯片相关品牌
IRFR320TRR规格书下载地址
IRFR320TRR参数引脚图相关
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IRFR320TRR数据表相关新闻
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全新原装,公司现货销售
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2019-8-20
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