位置：首页 > IC中文资料第1949页 > IRFR320TRR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR320TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR320TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：827.67 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Celeron D Processor 文件：1.75778 Mbytes Page：82 Pages | Intel 英特尔 | | ||
TACT SWITCHES 文件：327.77 Kbytes Page：3 Pages | E-SWITCH | | ||
Clock Oscillators 文件：143.97 Kbytes Page：3 Pages | OSCILENT | | ||
SCREW TYPE SERIES 文件：323.12 Kbytes Page：1 Pages | DBLECTRO | | ||
Rectifier Diode 文件：370.14 Kbytes Page：3 Pages | Semikron 赛米控丹佛斯 | |
IRFR320TRR产品属性
- 类型
描述
- 型号
IRFR320TRR
- 功能描述
MOSFET N-Chan 400V 3.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
2700 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
0048+ |
TO-252 |
1950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
NEW |
D-PAK |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
25+23+ |
TO252-2 |
19897 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
22+ |
TO252-2 |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
SOT252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
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IRFR320TRR规格书下载地址
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IRFR320TRR数据表相关新闻
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2019-8-20
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