型号 功能描述 生产厂家&企业 LOGO 操作
IRFR320TRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技威世科技半导体

IRFR320TRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Celeron D Processor

文件:1.75778 Mbytes Page:82 Pages

Intel

英特尔

TACT SWITCHES

文件:327.77 Kbytes Page:3 Pages

E-SWITCH

Clock Oscillators

文件:143.97 Kbytes Page:3 Pages

OSCILENT

SCREW TYPE SERIES

文件:323.12 Kbytes Page:1 Pages

DBLECTRO

迪贝电子

Rectifier Diode

文件:370.14 Kbytes Page:3 Pages

Semikron

赛米控丹佛斯

IRFR320TRR产品属性

  • 类型

    描述

  • 型号

    IRFR320TRR

  • 功能描述

    MOSFET N-Chan 400V 3.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-7 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-252
36800
IR
1923+
TO-252
6896
原装进口现货库存专业工厂研究所配单供货
Vishay Siliconix
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
IR
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY
23+
TO252-2
8560
受权代理!全新原装现货特价热卖!
IR
24+
TO-252
90000
一级代理商进口原装现货、价格合理
VISHAY/威世
22+
TO252-2
8000
原装正品支持实单
VISHAY
2025+
TO252-2
3550
全新原厂原装产品、公司现货销售
IR
0048+
TO-252
1950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NK/南科功率
2025+
TO-252
986966
国产

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