IRFR320TR价格

参考价格:¥2.4317

型号:IRFR320TRLPBF 品牌:Vishay / Semiconductor 备注:这里有IRFR320TR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR320TR批发/采购报价,IRFR320TR行情走势销售排行榜,IRFR320TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR320TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:827.67 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Celeron D Processor

文件:1.75778 Mbytes Page:82 Pages

Intel

英特尔

TACT SWITCHES

文件:327.77 Kbytes Page:3 Pages

E-SWITCH

Clock Oscillators

文件:143.97 Kbytes Page:3 Pages

OSCILENT

SCREW TYPE SERIES

文件:323.12 Kbytes Page:1 Pages

DBLECTRO

Rectifier Diode

文件:370.14 Kbytes Page:3 Pages

Semikron

赛米控丹佛斯

IRFR320TR产品属性

  • 类型

    描述

  • 型号

    IRFR320TR

  • 功能描述

    MOSFET N-Chan 400V 3.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA
12000
全新原装假一赔十
INFINEON/英飞凌
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
IR/VISHAY
22+
SOT252
100000
代理渠道/只做原装/可含税
VISHAY/威世
25+
TO-252
22000
原装现货假一罚十
VISHAY/威世
19+
明嘉莱只做原装正品现货
2510000
TO-252
Vishay(威世)
24+
TO-252-2(DPAK)
8048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
IOR
25+23+
TO252
49519
绝对原装正品现货,全新深圳原装进口现货
IR
22+
TO-252
8000
原装正品支持实单
IR
25+
QFP
3200
全新原装、诚信经营、公司现货销售

IRFR320TR数据表相关新闻