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位置：首页 > IC中文资料第4130页 > IRFR240

IRFR240价格

参考价格：￥2.6500

型号：IRFR2405PBF 品牌：IR 备注：这里有IRFR240多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR240批发/采购报价，IRFR240行情走势销售排行榜，IRFR240报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR2405

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2405

Surface Mount (IRFR2405)

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf

KERSEMI

IRFR2405PBF

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRFR2405PBF

Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRFR2405PBF

HEXFET Power MOSFET

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2405PBF

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2405TR

55V N -Channel MOSFET

Description Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 55V ID =34A (VGS = 10V) RDS(ON)

UMW

友台半导体

IRFR2405TRPBF

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

IRFR2405TRPBF

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2405TRPBF-TP

N-Channel Enhancement Mode MOSFET

Application | « Adaptor » Charger '« Power management © SMPS Standby Power |

TECHPUBLIC

台舟电子

IRFR2407

Power MOSFET

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Surfa

KERSEMI

IRFR2407

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤26mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR2407

Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2407PBF

HEXFET짰Power MOSFET

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRFR2407PBF

ADVANCED PROCESS TECHNOLOGY

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRFR2407PBF

Surface Mount

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRFR2405

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Infineon

英飞凌

IRFR2405

N-Channel MOSFET Transistor

文件：334.89 Kbytes Page：2 Pages

ISC

无锡固电

IRFR2405_15

Surface Mount (IRFR2405)

文件：901.79 Kbytes Page：10 Pages

KERSEMI

IRFR2405LPBF

Surface Mount (IRFR2405)

文件：226.77 Kbytes Page：11 Pages

IRF

IRFR2405LPBF

Surface Mount (IRFR2405)

Infineon

英飞凌

IRFR2405PbF

Surface Mount (IRFR2405)

文件：226.77 Kbytes Page：11 Pages

IRF

IRFR2405PBF

Advanced Process Technology

文件：226.77 Kbytes Page：11 Pages

IRF

IRFR2405PBF_15

Advanced Process Technology

文件：226.77 Kbytes Page：11 Pages

IRF

IRFR2407

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

IRF

IRFR2407

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

KERSEMI

IRFR2407

采用 D-Pak 封装的 75V 单 N 通道 IR MOSFET

Infineon

英飞凌

IRFR2407

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

LUCKY-LIGHT

IRFR2407_15

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

LUCKY-LIGHT

IRFR2407PBF

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

IRF

IRFR2407PBF_15

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

IRF

IRFR2407TRL

HEXFET Power MOSFET

文件：3.71638 Mbytes Page：10 Pages

KERSEMI

IRFR2407TRPBF

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

IRF

IRFR2407TRR

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

KERSEMI

240

5x25mm MINIATURE FUSES

文件：79.32 Kbytes Page：2 Pages

Littelfuse

力特

240

MINIATURE FUSES - 5x25mm

文件：79.03 Kbytes Page：2 Pages

Littelfuse

力特

240

Direct replacement for BA15d

文件：202.07 Kbytes Page：4 Pages

MARL

240ACDR

240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages

GAPTEC

240ACDR_SC

240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages

GAPTEC

IRFR240产品属性

  • 类型

    描述

  • 型号

    IRFR240

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N D-PAK

IRFR240供应商更多...

更新时间：2025-12-27 11:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市讯顺达科技有限公司
IRFR2405TRPBF
IR
20+
TO-252
15100
全新原装公司现货
询价
中天科工半导体（深圳）有限公司
IRFR2405
INFINEON/英飞凌
25+
TO-252
45000
IR全新现货IRFR2405即刻询购立享优惠#长期有排单订
询价
标准国际(香港)有限公司
IRFR2405
IR
25+
TO-252
100
公司原装现货
询价
深圳市勤思达科技有限公司
IRFR2405TRPBF
IR
2020+
SOP-252
22000
全新原装正品 现货库存 价格优势
询价
深圳市中联芯电子有限公司
IRFR2405TRPBF
IR
24+
D-PAK
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
深圳市科恒伟业电子有限公司
IRFR2405TRPBF
INFINEON/英飞凌
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
深圳市高捷芯城科技有限公司
IRFR2405TRLPBF
Infineon(英飞凌)
24+
TO-252
9908
支持大陆交货,美金交易。原装现货库存。
询价
深圳市龙瀚电子有限公司
IRFR2405TRPBF
IR
16+
SOP-252
6263
全新原装/深圳现货库2
询价
深圳市昊创电子有限公司
IRFR2405TRPBF
IR
2021+
D-PAK
9450
原装现货。
询价
深圳市南科功率半导体有限公司
IRFR2405TRPBF55V16MR
NK/南科功率
9420
TO252
36520
国产南科平替供应大量
询价

IRFR240芯片相关品牌

IRFR240规格书下载地址

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IRFR240数据表相关新闻

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  • IRFR2405PDF资料原装正品供应商

    IRFR2405 PDF资料

    2019-1-28

DdatasheetPDF页码索引

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