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IRFR214价格
参考价格：￥2.2630
型号：IRFR214PBF 品牌：Vishay 备注：这里有IRFR214多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR214批发/采购报价，IRFR214行情走势销售排行榜，IRFR214报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR214 | 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators | Intersil |   | |
IRFR214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A | IRF | | |
IRFR214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | |
IRFR214 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9 | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR214 | 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
IRFR214 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR214 | Power MOSFET 文件：853.62 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR214 | iscN-Channel MOSFET Transistor 文件：331.94 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9 | VishayVishay Siliconix 威世威世科技公司 | | ||
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | Fairchild 仙童半导体 | | ||
HEXFET짰 Power MOSFET HEXFET® Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR214) • Straight Lead (IRFU214) • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Lead-Free | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET 文件：853.62 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：321.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：873.05 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
M8 Male 3 Pin Field Attachable 文件：179.39 Kbytes Page：2 Pages | ALPHAWIRE | | ||
M8 Male 3 Pin Field Attachable 文件：179.39 Kbytes Page：2 Pages | ALPHAWIRE | | ||
Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources 文件：193.94 Kbytes Page：11 Pages | Intersil | | ||
A Series 1-4 Pole Rotary Switches 文件：1.26409 Mbytes Page：5 Pages | CK-COMPONENTS 力特 | | ||
1-4 Pole Rotary Switches 文件：299.98 Kbytes Page：5 Pages | CK-COMPONENTS 力特 | |
IRFR214产品属性
- 类型
描述
- 型号
IRFR214
- 功能描述
MOSFET N-Chan 250V 2.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VishayPCS |
新 |
5 |
全新原装 货期两周 |
||||
IR |
25+23+ |
TO-252 |
28071 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
17+ |
NA |
6200 |
100%原装正品现货 |
|||
IR |
23+ |
65480 |
|||||
IR |
NEW |
D-PAK |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FSC |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
HARRIS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
19+ |
TO-252 |
20000 |
||||
VISHAY/威世 |
21+ |
TO252 |
10000 |
原装现货假一罚十 |
IRFR214规格书下载地址
IRFR214参数引脚图相关
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- IRFR224PBF
- IRFR224
- IRFR220TRRPBF
- IRFR220TRPBF
- IRFR220TRLPBF-CUTTAPE
- IRFR220TRLPBF
- IRFR220PBF
- IRFR220NTRPBF-CUTTAPE
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- IRFR210BTF
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- IRFR15N20DTRLP
- IRFR15N20DPBF
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
IRFR214数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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