2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR214, SiHFR214);

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

丝印代码：DPAK；iscN-Channel MOSFET Transistor

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Power MOSFET

文件：853.62 Kbytes Page：11 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

HEXFET짰 Power MOSFET

HEXFET® Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR214) • Straight Lead (IRFU214) • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Lead-Free

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

Power MOSFET

文件：853.62 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

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Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

CCD Video Camera Signal Processor ICs

■ Overview The AN2145NFHP is a CCD video camera signal processor IC for 510H CCD. It incorporates full chroma signal LPFs and horizontal aperture correction circuits. Because carrier-balance is rationalized and ajustment-free, adjustments and necessary external components are reduced half in numb

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LOW DROP POWER SCHOTTKY RECTIFIER

Description Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. Packaged in SMA or SMB, the STPS1L30 is ideal for use in parallel with MOSFETs in synchronous rectification. Features • Very low forward voltage dr

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Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO •

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE