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位置：首页 > IC中文资料第3556页 > IRFR214

IRFR214价格

参考价格：￥2.2630

型号：IRFR214PBF 品牌：Vishay 备注：这里有IRFR214多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR214批发/采购报价，IRFR214行情走势销售排行榜，IRFR214报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

Intersil

IRFR214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VishayVishay Siliconix

威世

IRFR214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A

IRF

IRFR214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214

iscN-Channel MOSFET Transistor

文件：331.94 Kbytes Page：2 Pages

ISC

无锡固电

IRFR214

Power MOSFET

文件：853.62 Kbytes Page：11 Pages

VishayVishay Siliconix

威世

IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

IRFR214

Power MOSFET

VishayVishay Siliconix

威世

IRFR214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

Infineon

英飞凌

IRFR214_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VishayVishay Siliconix

威世

IRFR214B

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFR214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214PBF

HEXFET짰 Power MOSFET

HEXFET® Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR214) • Straight Lead (IRFU214) • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Lead-Free

IRF

IRFR214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214TRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214TRPbFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世

IRFR214TRRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214_17

Power MOSFET

文件：853.62 Kbytes Page：11 Pages

VishayVishay Siliconix

威世

IRFR214A

isc N-Channel MOSFET Transistor

文件：321.15 Kbytes Page：2 Pages

ISC

无锡固电

IRFR214PBF

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214PBF-BE3B

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214TRLPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214TRLPBF-BE3AB

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214TRPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214TRPBF-BE3AB

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

IRFR214TRRPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世

214

M8 Male 3 Pin Field Attachable

文件：179.39 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿尔法电线

214HR

M8 Male 3 Pin Field Attachable

文件：179.39 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿尔法电线

214Z

Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources

文件：193.94 Kbytes Page：11 Pages

Intersil

A214

A Series 1-4 Pole Rotary Switches

文件：1.26409 Mbytes Page：5 Pages

CK-COMPONENTS

力特

A214

1-4 Pole Rotary Switches

文件：299.98 Kbytes Page：5 Pages

CK-COMPONENTS

力特

IRFR214产品属性

  • 类型

    描述

  • 型号

    IRFR214

  • 功能描述

    MOSFET N-Chan 250V 2.2 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFR214供应商更多...

更新时间：2025-10-11 12:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市柯尔基电子有限公司
IRFR214
IR
23+24
TO-252
59630
主营原装MOS,二三级管,肖特基,功率场效应管
询价
深圳市华来深电子有限公司
IRFR214
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市佳鑫美电子科技有限公司
IRFR214
IOR
25+
TO-252
2987
绝对全新原装现货供应!
询价
深圳市昌和盛利电子有限公司
IRFR214
IR
NEW
D-PAK
9562
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市赛美科科技有限公司
IRFR214
INTERSIL
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
中天科工半导体（深圳）有限公司
IRFR214TR
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRFR214TR即刻询购立享优惠#长期有货
询价
贸泽芯城（深圳）电子科技有限公司
IRFR214
VISHAY/威世
23+
SOT-252
61611
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市科达星科技有限公司
IRFR214
IR
24+
TO-252
27500
原装正品,价格最低!
询价
深圳市坤融电子科技有限公司
IRFR214TRPBF
IR
24+
TO-252
6000
只做原厂渠道 可追溯货源
询价
深圳市勤思达科技有限公司
IRFR214
IR
2015+
D-Pak
12500
全新原装,现货库存长期供应
询价

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IRFR214规格书下载地址

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