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位置：首页 > IC中文资料第3556页 > IRFR214

IRFR214价格

参考价格：￥2.2630

型号：IRFR214PBF 品牌：Vishay 备注：这里有IRFR214多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR214批发/采购报价，IRFR214行情走势销售排行榜，IRFR214报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

Intersil

IRFR214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VishayVishay Siliconix

威世威世科技公司

IRFR214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A

IRF

IRFR214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214

iscN-Channel MOSFET Transistor

文件：331.94 Kbytes Page：2 Pages

ISC

无锡固电

IRFR214

Power MOSFET

文件：853.62 Kbytes Page：11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

IRFR214

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFR214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

Infineon

英飞凌

IRFR214_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR214, SiHFR214) • Straight lead (IRFU214, SiHFU214) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VishayVishay Siliconix

威世威世科技公司

IRFR214B

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Fairchild

仙童半导体

IRFR214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214PBF

HEXFET짰 Power MOSFET

HEXFET® Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR214) • Straight Lead (IRFU214) • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Lead-Free

IRF

IRFR214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214TRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214TRPbFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214TRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

VishayVishay Siliconix

威世威世科技公司

IRFR214TRRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

KERSEMI

IRFR214_17

Power MOSFET

文件：853.62 Kbytes Page：11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214A

isc N-Channel MOSFET Transistor

文件：321.15 Kbytes Page：2 Pages

ISC

无锡固电

IRFR214PBF

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214PBF-BE3B

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214TRLPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214TRLPBF-BE3AB

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214TRPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214TRPBF-BE3AB

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR214TRRPBFA

Power MOSFET

文件：873.05 Kbytes Page：13 Pages

VishayVishay Siliconix

威世威世科技公司

214

M8 Male 3 Pin Field Attachable

文件：179.39 Kbytes Page：2 Pages

ALPHAWIRE

214HR

M8 Male 3 Pin Field Attachable

文件：179.39 Kbytes Page：2 Pages

ALPHAWIRE

214Z

Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources

文件：193.94 Kbytes Page：11 Pages

Intersil

A214

A Series 1-4 Pole Rotary Switches

文件：1.26409 Mbytes Page：5 Pages

CK-COMPONENTS

力特

A214

1-4 Pole Rotary Switches

文件：299.98 Kbytes Page：5 Pages

CK-COMPONENTS

力特

IRFR214产品属性

  • 类型

    描述

  • 型号

    IRFR214

  • 功能描述

    MOSFET N-Chan 250V 2.2 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFR214供应商更多...

更新时间：2025-12-29 8:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亿智腾科技有限公司
IRFR214
IR
24+
TO-252
6430
原装现货/欢迎来电咨询
询价
深圳市安罗世纪电子有限公司
IRFR214BTF(FP001)
FAIRCHILD
2023+
SMD
2000
安罗世纪电子只做原装正品货
询价
深圳市诺美思科技有限公司
IRFR214TRPBF
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
询价
京海半导体(深圳)有限公司
IRFR214TRRPBF
VISHAY/威世
21+
TO252
10000
原装现货假一罚十
询价
深圳诚思涵科技有限公司
IRFR214BTF-NL
FAIRCHILD
19+
TO-252
20000
询价
深圳瞄钧科技有限公司
IRFR214ATM
SAMSUNG
24+
SOT-252
89000
特价特价100原装长期供货.
询价
深圳市凌旭科技有限公司
IRFR214BTF
IR
2016+
TO252
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市恒创达实业有限公司
IRFR214TRPBF
VISHAY
17+
NA
6200
100%原装正品现货
询价
深圳市粤骏腾电子科技有限公司
IRFR214TRPBF
SILICONIXVISHAY
24+
NA
2000
原装现货,专业配单专家
询价
深圳市晨豪科技有限公司
IRFR214TRPBF
INFINEON/英飞凌
23+
TO-252
89630
当天发货全新原装现货
询价

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