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IRFR214TR价格
参考价格:¥2.2630
型号:IRFR214TRPBF 品牌:Vishay 备注:这里有IRFR214TR多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR214TR批发/采购报价,IRFR214TR行情走势销售排行榜,IRFR214TR报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR214TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世科技 | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | |||
Power MOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:873.05 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
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IRFR214TR产品属性
- 类型
描述
- 型号
IRFR214TR
- 功能描述
MOSFET N-Chan 250V 2.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
6000 |
只做原厂渠道 可追溯货源 |
|||
IR |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
IR |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+ |
TO-252 |
10000 |
||||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
25+ |
TO-252 |
860000 |
明嘉莱只做原装正品现货 |
|||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
IRFR214TR芯片相关品牌
IRFR214TR规格书下载地址
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IRFR214TR数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A(Tc) 3W(Ta),140W(Tc) D-PAK(TO-252AA)
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs,Id) 235mΩ 10V,8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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