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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120ATF | AdvancedPowerMOSFET 文件：258.5 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 |  | | |
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件：106.68 Kbytes Page：1 Pages | WITTEN Witten Company, Inc. |  | | |
PrecisionWirewoundResistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Inc. | | | |
TemperatureSensorsLineGuide 文件：736.09 Kbytes Page：11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |  | |
IRFR120ATF产品属性
- 类型
描述
- 型号
IRFR120ATF
- 功能描述
MOSFET 100V Single
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
NA/ |
5632 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
22+ |
TO-252 |
30000 |
原装正品 |
|||
FSC |
22+ |
TO-252-2 |
6000 |
十年配单,只做原装 |
|||
FAIRCHILD |
22+ |
TO-252 |
6000 |
进口原装 假一罚十 现货 |
|||
FAIRCHILD |
TO-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
FAIRCHILD/仙童 |
06+ |
TO-252-2 |
1900 |
就找我吧!--邀您体验愉快问购元件! |
|||
FAIRCHILD |
05+ |
原厂原装 |
38216 |
只做全新原装真实现货供应 |
|||
FAIRCHILD/仙童 |
22+ |
TO-252 |
8000 |
只做原装正品现货 |
|||
FAIRCHILD/仙童 |
22+ |
SOD123 |
54095 |
郑重承诺只做原装进口货 |
|||
FAIRCHILD/仙童 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
IRFR120ATF芯片相关品牌
IRFR120ATF规格书下载地址
IRFR120ATF参数引脚图相关
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IRFR120ATF数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
DdatasheetPDF页码索引
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