P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

12A, 200V, 0.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-12A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -12A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.5Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

-200V P-Channel Power MOSFET

Power MOSFET

200 V, P-channel power MOSFET

Power MOSFET

文件：1.83546 Mbytes Page：11 Pages

HEXFET짰 Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

• Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

Power MOSFET

文件：1.83546 Mbytes Page：11 Pages

Avalanche-Energy-Rated P-Channel Power MOSFETs

文件：178.21 Kbytes Page：2 Pages

Analog Video, RG59, #20 Solid BCCS, 80 BC Braid, PVC Jacket

Product Description 20 AWG solid .032 bare copper-covered steel conductor, foam polyethylene insulation, bare copper braid shield (80 coverage), PVC jacket.

14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC

DESCRIPTION: Maxwell Technologies’ 9240LP is a 14-bit, analog-to-digital converter that operates at a 10 MSPS rate. Manufactured with a high speed CMOS process, this ADC contains an on-chip, high performance, low noise, sample-and-hold amplifier and programmable voltage reference. FEATURES

14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC

DESCRIPTION: Maxwell Technologies’ 9240LP is a 14-bit, analog-to-digital converter that operates at a 10 MSPS rate. Manufactured with a high speed CMOS process, this ADC contains an on-chip, high performance, low noise, sample-and-hold amplifier and programmable voltage reference. FEATURES

14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC

DESCRIPTION: Maxwell Technologies’ 9240LP is a 14-bit, analog-to-digital converter that operates at a 10 MSPS rate. Manufactured with a high speed CMOS process, this ADC contains an on-chip, high performance, low noise, sample-and-hold amplifier and programmable voltage reference. FEATURES

14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC

DESCRIPTION: Maxwell Technologies’ 9240LP is a 14-bit, analog-to-digital converter that operates at a 10 MSPS rate. Manufactured with a high speed CMOS process, this ADC contains an on-chip, high performance, low noise, sample-and-hold amplifier and programmable voltage reference. FEATURES