P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

12A, 200V, 0.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -12A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.5Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-12A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

-200V P-Channel Power MOSFET

200 V, P-channel power MOSFET

Power MOSFET

文件：1.83546 Mbytes Page：11 Pages

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

HEXFET짰 Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

• Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

Power MOSFET

文件：1.83546 Mbytes Page：11 Pages

Avalanche-Energy-Rated P-Channel Power MOSFETs

文件：178.21 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET

FEATURES • P–CHANNEL POWER MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES

Analog Signal Processor (ASP) for CD players

Overview The LA9240M is an analog signal processing and servo control bipolar IC designed for use in compact disc players; a compact disc player can be configured by combining this IC with a CD-DSP such as the LC78622E and LC78620E, with a small number of additional components required. Features

AUDIO LCD DRIVER IC

文件：381.01 Kbytes Page：10 Pages

AUDIO LCD DRIVER IC

文件：381.01 Kbytes Page：10 Pages