Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Ultra Low On-Resistance

Description The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enla

60V N-Channel IRFL4105

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particula

采用 SOT-223 封装的 55V 单 N 通道 IR MOSFET

Advanced Process Technology

Advanced Process Technology

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HEXFET짰 Power MOSFET

文件：158.56 Kbytes Page：9 Pages

Advanced Process Technology

文件：163.88 Kbytes Page：9 Pages

HEXFET짰 Power MOSFET

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Advanced Process Technology

文件：163.88 Kbytes Page：9 Pages

Advanced Process Technology

文件：163.88 Kbytes Page：9 Pages

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

true one-port, surface-acoustic-wave (SAW) resonator

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Advanced Planar Technology Low On-Resistance

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