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IRFIZ48价格
参考价格：￥6.1583
型号：IRFIZ48GPBF 品牌：VISHAY 备注：这里有IRFIZ48多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIZ48批发/采购报价，IRFIZ48行情走势销售排行榜，IRFIZ48报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIZ48 | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF |   | |
IRFIZ48 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) | IRF | | |
IRFIZ48 | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A) Through-Hole Packags TO-220 FullPak (Fully Isolated) | IRF | | |
IRFIZ48 | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A) | INFINEON 英飞凌 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A) Through-Hole Packags TO-220 FullPak (Fully Isolated) | IRF | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | | ||
Power MOSFET 文件：1.44778 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.44778 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：319.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.48658 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Power MOSFET 文件：595.78 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.44778 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：595.78 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MOSFET N-CH 60V HEXFET MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：595.78 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.44778 Mbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET 文件：3.40525 Mbytes Page：7 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：261.12 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER MOSFET 文件：275.16 Kbytes Page：9 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：276.12 Kbytes Page：9 Pages | IRF | | ||
Advanced Process Technology 文件：506.1 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：276.12 Kbytes Page：9 Pages | IRF | |
IRFIZ48产品属性
- 类型
描述
- 型号
IRFIZ48
- 制造商
Vishay Intertechnologies
- 功能描述
IR DOES NOT RECOGNIZE P/N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR/VISHAY |
25+ |
TO-220F |
45000 |
IR/VISHAY全新现货IRFIZ48GPBF即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO 220F |
160952 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
SOT-3781&NBS |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
MICROCHIP/美国微芯 |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
65480 |
|||||
MICROCHIP/美国微芯 |
25+ |
TO-220 |
30000 |
原装正品公司现货,假一赔十! |
|||
68 |
220F |
IR |
5 |
92 |
|||
IR |
2450+ |
TO-220 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
IRFIZ48芯片相关品牌
IRFIZ48规格书下载地址
IRFIZ48参数引脚图相关
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2019-3-7
DdatasheetPDF页码索引
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