位置：首页 > IC中文资料第3556页 > IRFIZ48V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIZ48V | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF |   | |
IRFIZ48V | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | | |
IRFIZ48V | HEXFET Power MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |
IRFIZ48V产品属性
- 类型
描述
- 型号
IRFIZ48V
- 制造商
International Rectifier
- 功能描述
MOSFET, 60V, 39A, 12 mOhm, 73.3 nC Qg, TO-220 FULLPACK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO220F |
7000 |
||||
IR |
23+ |
TO-220FullPak(Iso) |
6000 |
原装正品，支持实单 |
|||
IR |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
|||
IR |
25+ |
5 |
860000 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
原厂封装 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
NA/ |
16383 |
原装现货,当天可交货,原型号开票 |
|||
68 |
220F |
IR |
5 |
92 |
|||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
IRFIZ48V芯片相关品牌
IRFIZ48V规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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