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IRFIBC40价格
参考价格：￥11.5858
型号：IRFIBC40GPBF 品牌：Vishay 备注：这里有IRFIBC40多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIBC40批发/采购报价，IRFIBC40行情走势销售排行榜，IRFIBC40报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC40 | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF |   | |
IRFIBC40 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | INFINEON 英飞凌 | | |
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
iscN-Channel MOSFET Transistor 文件：319.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：319.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) | INFINEON 英飞凌 | | ||
Low thermal resistance 文件：890.14 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：921.32 Kbytes Page：8 Pages | IRF | |
IRFIBC40产品属性
- 类型
描述
- 型号
IRFIBC40
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
04+ |
TO-220F |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
25+ |
TO-220FP |
880000 |
明嘉莱只做原装正品现货 |
|||
25+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR |
25+23+ |
TO-220 |
25598 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-220F |
88675 |
||||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
98+ |
TO220F |
3015 |
全新 发货1-2天 |
|||
IR |
26+ |
SOT-23 |
86720 |
全新原装正品价格最实惠 假一赔百 |
IRFIBC40规格书下载地址
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DdatasheetPDF页码索引
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