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IRFIBC40G价格
参考价格：￥11.5858
型号：IRFIBC40GPBF 品牌：Vishay 备注：这里有IRFIBC40G多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIBC40G批发/采购报价，IRFIBC40G行情走势销售排行榜，IRFIBC40G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC40G | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF |   | |
IRFIBC40G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFIBC40G | iscN-Channel MOSFET Transistor 文件：319.15 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFIBC40G | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
IRFIBC40G | Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFIBC40G | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：319.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Low thermal resistance 文件：890.14 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MOSFET N-CH600V HEXFET MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：829.12 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：921.32 Kbytes Page：8 Pages | IRF | |
IRFIBC40G产品属性
- 类型
描述
- 型号
IRFIBC40G
- 功能描述
MOSFET N-Chan 600V 3.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
04+ |
TO-220F |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO 220F |
161274 |
明嘉莱只做原装正品现货 |
|||
IR/VISHAY |
25+ |
TO-220F |
45000 |
IR/VISHAY全新现货IRFIBC40G即刻询购立享优惠#长期有排单订 |
|||
IR |
24+/25+ |
TO-220F |
10 |
原装正品现货库存价优 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
24+ |
TO-220F |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR |
25+23+ |
TO-220 |
25598 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
IRFIBC40G规格书下载地址
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DdatasheetPDF页码索引
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