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IRFIBC20价格
参考价格：￥4.3411
型号：IRFIBC20GPBF 品牌：VISHAY 备注：这里有IRFIBC20多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIBC20批发/采购报价，IRFIBC20行情走势销售排行榜，IRFIBC20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 | IRF |   | |
IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) | INFINEON 英飞凌 | | |
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | KERSEMI | | ||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：319.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET | INFINEON 英飞凌 | |
IRFIBC20产品属性
- 类型
描述
- 型号
IRFIBC20
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2023+ |
TO220 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
IR |
03+ |
TO220 |
245 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO220 |
598000 |
原装现货假一赔十 |
|||
IR |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
25+ |
TO220-3 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+24 |
TO-220F |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
IR |
26+ |
TO-220F |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
2021+ |
TO-220F |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
25+ |
TO220F |
58 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
IRFIBC20规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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