IRFIBC20价格

参考价格:¥4.3411

型号:IRFIBC20GPBF 品牌:VISHAY 备注:这里有IRFIBC20多少钱,2026年最近7天走势,今日出价,今日竞价,IRFIBC20批发/采购报价,IRFIBC20行情走势销售排行榜,IRFIBC20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFIBC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8

IRF

IRFIBC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

INFINEON

英飞凌

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

KERSEMI

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

KERSEMI

iscN-Channel MOSFET Transistor

文件:319.25 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

INFINEON

英飞凌

IRFIBC20产品属性

  • 类型

    描述

  • 型号

    IRFIBC20

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

更新时间:2026-1-27 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
IR
24+
TO 220
161272
明嘉莱只做原装正品现货
vishay
25+
500000
行业低价,代理渠道
IR
21+
TO220F
1709
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
IR
06+
TO-220F
1200
IR
06+
TO-220
4500
全新原装 绝对有货
INFINEON/英飞凌
2540+
TO-220F
8595
只做原装正品假一赔十为客户做到零风险!!

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