IRFIBC20G价格

参考价格:¥4.3411

型号:IRFIBC20GPBF 品牌:VISHAY 备注:这里有IRFIBC20G多少钱,2026年最近7天走势,今日出价,今日竞价,IRFIBC20G批发/采购报价,IRFIBC20G行情走势销售排行榜,IRFIBC20G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFIBC20G

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8

IRF

IRFIBC20G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati

VISHAYVishay Siliconix

威世威世科技公司

IRFIBC20G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

KERSEMI

IRFIBC20G

iscN-Channel MOSFET Transistor

文件:319.25 Kbytes Page:2 Pages

ISC

无锡固电

IRFIBC20G

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

KERSEMI

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

INFINEON

英飞凌

IRFIBC20G产品属性

  • 类型

    描述

  • 型号

    IRFIBC20G

  • 功能描述

    MOSFET N-Chan 600V 1.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-11 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 220
161262
明嘉莱只做原装正品现货
IR
03+
TO220
245
一级代理,专注军工、汽车、医疗、工业、新能源、电力
vishay
25+
500000
行业低价,代理渠道
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
21+
TO220F
1709
IR
24+
TO-220F
10000
只做原装正品现货 欢迎来电查询15919825718
IR
06+
TO-220F
1200
Vishay Siliconix
22+
TO2203 Isolated Tab
9000
原厂渠道,现货配单
IR
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
IR
NA
8560
一级代理 原装正品假一罚十价格优势长期供货

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