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IRFIBC20G价格
参考价格：￥4.3411
型号：IRFIBC20GPBF 品牌：VISHAY 备注：这里有IRFIBC20G多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIBC20G批发/采购报价，IRFIBC20G行情走势销售排行榜，IRFIBC20G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC20G | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 | IRF |   | |
IRFIBC20G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati | VishayVishay Siliconix 威世威世科技公司 | | |
IRFIBC20G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | KERSEMI | | |
IRFIBC20G | iscN-Channel MOSFET Transistor 文件：319.25 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFIBC20G | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | KERSEMI | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | |
IRFIBC20G产品属性
- 类型
描述
- 型号
IRFIBC20G
- 功能描述
MOSFET N-Chan 600V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
|||
IR |
24+ |
TO-220 |
45000 |
IR代理原包原盒,假一罚十。最低价 |
|||
IR |
21+ |
TO220F |
1709 |
||||
IR |
25+ |
TO220F |
58 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
vishay |
25+ |
500000 |
行业低价,代理渠道 |
||||
IR |
24+ |
TO 220 |
161262 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
NA/ |
6530 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IRFIBC20G规格书下载地址
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DdatasheetPDF页码索引
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