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IRFI740价格
参考价格：￥12.5883
型号：IRFI740GLCPBF 品牌：Vishay Siliconix 备注：这里有IRFI740多少钱，2024年最近7天走势，今日出价，今日竞价，IRFI740批发/采购报价，IRFI740行情走势销售排行榜，IRFI740报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFI740 | PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A) Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A) Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCr | VishayVishay Siliconix 威世科技 |  | | |
PowerMOSFET FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.7A) DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCr | VishayVishay Siliconix 威世科技 | | | |
AdvancedPowerMOSFET 文件：233.1 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PowerMOSFET 文件：700.5 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：700.5 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：700.5 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET 文件：935.15 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
10A400VN-channelEnhancementModePowerMOSFET 文件：1.67134 Mbytes Page：12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | | |
GROMMETS,BUSHINGS 文件：362.45 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
WihaQualityToolsSlottedBits 文件：303.45 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | | |
CONTROLB횁SICOYECON횙MICODELRELOJFECHADORELECTR횙NICO 文件：702.85 Kbytes Page：2 Pages | PENTAIRPentair plc. All rights reserved. 滨特尔滨特尔集团 |  | | |
GENERALPURPOSEBARATRONCAPACITANCEMANOMETERS 文件：167.85 Kbytes Page：4 Pages | MKS MKS Instruments. |  | |
IRFI740产品属性
- 类型
描述
- 型号
IRFI740
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
|||
IR |
24+ |
TO220F |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
IR |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
VISHAY(威世) |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD/仙童 |
23+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2017+ |
TO-220 |
28659 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
IR |
22+ |
TO-220F |
88546 |
IRFI740芯片相关品牌
IRFI740规格书下载地址
IRFI740参数引脚图相关
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DdatasheetPDF页码索引
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