DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30V VGS Rating

• Isolated Package

• High Voltage Isolation = 2.5 KVRMS

• Sink to Lead Creepage Dist.= 4.8 mm

• Repetitive Avalanche Rated