Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

Description Third Gneration HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial app

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Cr

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=5.4A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.7A)

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

HEXFET짰 Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Cr

Power MOSFET

文件：700.5 Kbytes Page：10 Pages

HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A

Power MOSFET

文件：700.5 Kbytes Page：10 Pages

Power MOSFET

文件：700.5 Kbytes Page：10 Pages

HEXFET Power MOSFET

HEXFET Power MOSFET

文件：935.15 Kbytes Page：8 Pages

740/741 High Displacement Threaded Diaphragm Seal

FEATURES „ Large diaphragm provides ample displacement for inches of water ranges „ Ideal for high static, low differential pressure applications

GROMMETS , BUSHINGS

文件：362.45 Kbytes Page：1 Pages

Wiha Quality Tools Slotted Bits

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CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO

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10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes Page：12 Pages