N-Channel MOSFET in a Hermetically sealed TO39

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. N-Channel MOSFET. VDSS = 200V ID = 2.25A RDS(ON) = 1.5Ω

2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also fe

2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET

MOSFETs and JFETs

HiRel MOSFETs

AUTO-DIP짰 Switch Automatically Insertable, Wave Solderable, Board Washable DIP Switch

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Thru-Bolts and Mounting Brackets

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M8 Female 3 Pin Field Attachable

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Direct replacement for T3 쩌 Midget Edison Screw E10

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Premier Supplier of Electronic Hardware

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