Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • -0.6A and -07A, -80V and -100V • rDS(ON) =

1-WATT RATED POWER MOSFETs

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Power MOSFET

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Power MOSFET

文件：1.64972 Mbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

Power MOSFET

文件：1.64972 Mbytes Page：9 Pages

Power MOSFET

文件：825.31 Kbytes Page：9 Pages

HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -0.70A )

文件：1.79065 Mbytes Page：8 Pages

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

MEASURING WHEEL

Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C

Releasable Type T Rivets

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Multi-Range 60 V DC Power Supplies

文件：726.58 Kbytes Page：1 Pages