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IRFB41N15D价格
参考价格：￥3.3652
型号：IRFB41N15DPBF 品牌：INTERNATIONAL 备注：这里有IRFB41N15D多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB41N15D批发/采购报价，IRFB41N15D行情走势销售排行榜，IRFB41N15D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB41N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFB41N15D | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | |
IRFB41N15D | N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFB41N15D | 采用 TO-220AB 封装的 150V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters | Infineon 英飞凌 | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF | | ||
High frequency DC-DC converters 文件：343 Kbytes Page：13 Pages | IRF | | ||
High frequency DC-DC converters 文件：343 Kbytes Page：13 Pages | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFB41N15D产品属性
- 类型
描述
- 型号
IRFB41N15D
- 功能描述
MOSFET N-CH 150V 41A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR墨西哥 |
16+17+ |
TO-220 |
4178 |
只做原装正品 |
|||
IR |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
INFINEON/IR |
21+ |
NA |
50 |
只做原装,假一罚十 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
23+ |
TO-220 |
3000 |
专做原装正品,假一罚百! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
25+23+ |
TO-220 |
28997 |
绝对原装正品全新进口深圳现货 |
IRFB41N15D规格书下载地址
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DdatasheetPDF页码索引
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