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IRFB41N15DPBF价格
参考价格：￥3.3652
型号：IRFB41N15DPBF 品牌：INTERNATIONAL 备注：这里有IRFB41N15DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB41N15DPBF批发/采购报价，IRFB41N15DPBF行情走势销售排行榜，IRFB41N15DPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB41N15DPBF | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF |   | |
IRFB41N15DPBF | High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters | Infineon 英飞凌 | | |
IRFB41N15DPBF | High frequency DC-DC converters 文件：343 Kbytes Page：13 Pages | IRF | | |
High frequency DC-DC converters 文件：343 Kbytes Page：13 Pages | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFB41N15DPBF产品属性
- 类型
描述
- 型号
IRFB41N15DPBF
- 功能描述
MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
662 |
||||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
INFINEON/IR |
21+ |
NA |
50 |
只做原装,假一罚十 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
24+ |
TO220 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/IR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
||||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
INFINEON/IR |
15+ |
50 |
TO-220-3 |
||||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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IRFB41N15DPBF规格书下载地址
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DdatasheetPDF页码索引
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