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IRF9540价格
参考价格:¥20.9563
型号:IRF9540 品牌:Vishay 备注:这里有IRF9540多少钱,2024年最近7天走势,今日出价,今日竞价,IRF9540批发/采购报价,IRF9540行情走势销售排行榜,IRF9540报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF9540 | P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | ||
IRF9540 | PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF9540 | 19A,100V,0.200Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF9540 | P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliablility | SamsungSamsung Group 三星三星半导体 | ||
IRF9540 | P-CHANNELPOWERMOSFETS Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran | HARRIS HARRIS corporation | ||
IRF9540 | TO-220-3LPlastic-EncapsulateMOSFETS FEATURES ·DrainCurrent–ID=-19A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter, | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
IRF9540 | PowerMOSFET 文件:159.11 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | ||
IRF9540 | iscN-ChannelMOSFETTransistor 文件:280.85 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF9540 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF9540 | PowerMOSFET 文件:1.68672 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | ||
IRF9540 | PowerMOSFET 文件:4.20729 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology
| KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AvailableinTapeandReel DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbeca | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •FastSwitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovi | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •FastSwitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovi | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:159.11 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
P-ChannelMOSFETTransistor 文件:334.83 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscP-ChannelMOSFETTransistor 文件:273.02 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:928.06 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:928.06 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:1.09268 Mbytes Page:10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
iscP-ChannelMOSFETTransistor 文件:297.37 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:311.78 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:332.36 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:332.36 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:332.36 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:311.78 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:4.20729 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:1.68672 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:159.11 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:159.11 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:203.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:176.64 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:203.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:203.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:203.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:176.64 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
655MHzLowJitterClockGenerator PRODUCTOVERVIEW TheAD9540isAnalogDevices’firstdedicatedclockingproductspecificallydesignedtosupporttheextremelystringentclockingrequirementsofthehighestperformancedataconverters.ThedevicefeatureshighperformancePLL(phase-lockedloop)circuitry,includingaflexible2 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
ComputerCableforEIARS-232Applications 文件:33.34 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
RS232,#24-10c,SR-PVC,O/AFoil,PVCJkt,CMG 文件:253.25 Kbytes Page:2 Pages | BELDEN Belden Inc. | |||
MACHINESCREWPANPHILLIPS10-32 文件:130.87 Kbytes Page:1 Pages | KEYSTONEKeystone Electronics Corp. Keystone公司Keystone Electronics有限公司 | |||
655MHzLowJitterClockGenerator 文件:588.82 Kbytes Page:32 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |
IRF9540产品属性
- 类型
描述
- 型号
IRF9540
- 功能描述
MOSFET -100V Single P-Channel HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
17+ |
DIP |
9988 |
只做原装,现货库存 |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
VISHAY |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
TO-263 |
13879 |
保证进口原装现货假一赔十 |
|||
IR |
23+ |
PLCC44 |
18000 |
||||
Vishay Siliconix |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
IR |
2021+ |
ZIP |
1600 |
自家库存,百分之百原装 |
|||
MX |
19+ |
TO-220 |
30000 |
原装现货,优势库存,当天可发货 |
IRF9540规格书下载地址
IRF9540参数引脚图相关
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- km710
- ka5q1265rf
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- jumper
- jtag接口
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- isd1420
- IRF9Z10
- IRF9G43
- IRF9956
- IRF9953
- IRF9952
- IRF9910
- IRF964S
- IRF9643
- IRF9642
- IRF9641
- IRF9640
- IRF9633
- IRF9632
- IRF9631
- IRF9630STRLPBF
- IRF9630SPBF
- IRF9630PBF
- IRF9630
- IRF9620STRLPBF
- IRF9620SPBF
- IRF9620PBF
- IRF9620
- IRF9610SPBF
- IRF9610PBF
- IRF9610
- IRF9543
- IRF9542
- IRF9541
- IRF9540STRLPBF
- IRF9540SPBF
- IRF9540PBF
- IRF9540NSTRRPBF-CUTTAPE
- IRF9540NSTRRPBF
- IRF9540NSTRLPBF
- IRF9540NSPBF
- IRF9540NPBF
- IRF9540NLPBF
- IRF9533
- IRF9532
- IRF9531
- IRF9530STRLPBF
- IRF9530SPBF
- IRF9530PBF
- IRF9530NSTRRPBF
- IRF9530NSTRLPBF-CUTTAPE
- IRF9530NSTRLPBF
- IRF9530NSPBF
- IRF9530NPBF
- IRF9530
- IRF9523
- IRF9522
- IRF9521
- IRF9520SPBF
- IRF9520PBF
- IRF9520NSPBF
- IRF9520NPBF
- IRF9520
- IRF9510STRLPBF
- IRF9510SPBF
- IRF9510PBF
- IRF9510
- IRF9410TRPBF
- IRF9410PBF
- IRF9410
- IRF9388
- IRF924S
- IRF9243
- IRF9242
- IRF9241
- IRF9240
- IRF9233
- IRF9232
- IRF9231
- IRF9230
IRF9540数据表相关新闻
IRFB3077PBF
IRFB3077PBF
2023-4-14IRF9317TRPBF
原装
2023-3-27IRF9540PBF
IRF9540PBF
2022-12-2IRF9332TRPBF原装现货
IRF9332TRPBF经营原装正品IC
2020-8-27IRF840ASTRLPBF每一片都来自原厂
原厂很远现货很近坚持每一片芯片都来自原厂及授权渠道
2020-5-30IRF9Z24NPBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18
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