IRF9540价格

参考价格:¥20.9563

型号:IRF9540 品牌:Vishay 备注:这里有IRF9540多少钱,2024年最近7天走势,今日出价,今日竞价,IRF9540批发/采购报价,IRF9540行情走势销售排行榜,IRF9540报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF9540

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

Samsung
IRF9540

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9540

19A,100V,0.200Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF9540

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliablility

SamsungSamsung Group

三星三星半导体

Samsung
IRF9540

P-CHANNELPOWERMOSFETS

Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran

HARRIS

HARRIS corporation

HARRIS
IRF9540

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES ·DrainCurrent–ID=-19A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
IRF9540

PowerMOSFET

文件:159.11 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF9540

iscN-ChannelMOSFETTransistor

文件:280.85 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF9540

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF9540

PowerMOSFET

文件:1.68672 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF9540

PowerMOSFET

文件:4.20729 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A)

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A)

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AvailableinTapeandReel

DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbeca

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •FastSwitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovi

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •FastSwitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovi

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:159.11 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

P-ChannelMOSFETTransistor

文件:334.83 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscP-ChannelMOSFETTransistor

文件:273.02 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ADVANCEDPROCESSTECHNOLOGY

文件:928.06 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCEDPROCESSTECHNOLOGY

文件:928.06 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:1.09268 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

iscP-ChannelMOSFETTransistor

文件:297.37 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:311.78 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:332.36 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:332.36 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:332.36 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:311.78 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:4.20729 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:1.68672 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:159.11 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:159.11 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:203.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:176.64 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:203.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:203.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:203.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:176.64 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

655MHzLowJitterClockGenerator

PRODUCTOVERVIEW TheAD9540isAnalogDevices’firstdedicatedclockingproductspecificallydesignedtosupporttheextremelystringentclockingrequirementsofthehighestperformancedataconverters.ThedevicefeatureshighperformancePLL(phase-lockedloop)circuitry,includingaflexible2

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ComputerCableforEIARS-232Applications

文件:33.34 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

RS232,#24-10c,SR-PVC,O/AFoil,PVCJkt,CMG

文件:253.25 Kbytes Page:2 Pages

BELDEN

Belden Inc.

BELDEN

MACHINESCREWPANPHILLIPS10-32

文件:130.87 Kbytes Page:1 Pages

KEYSTONEKeystone Electronics Corp.

Keystone公司Keystone Electronics有限公司

KEYSTONE

655MHzLowJitterClockGenerator

文件:588.82 Kbytes Page:32 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

IRF9540产品属性

  • 类型

    描述

  • 型号

    IRF9540

  • 功能描述

    MOSFET -100V Single P-Channel HEXFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-3-29 17:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
17+
DIP
9988
只做原装,现货库存
IR
23+
TO-220AB
8600
全新原装现货
IR
18+
TO220
12500
全新原装正品,本司专业配单,大单小单都配
VISHAY
2020+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
23+
TO-263
13879
保证进口原装现货假一赔十
IR
23+
PLCC44
18000
Vishay Siliconix
23+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
IR
23+
TO-220
30000
代理全新原装现货,价格优势
IR
2021+
ZIP
1600
自家库存,百分之百原装
MX
19+
TO-220
30000
原装现货,优势库存,当天可发货

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