P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

TO-220-3L Plas ti c-E n c a p s u late MOSFETS

FEATURES ·Drain Current –ID=-19A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.2Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

P-Channel MOSFET

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications Features： 1) VDS=-100V,ID=-20A,RDS(ON)

Power MOSFET

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isc N-Channel MOSFET Transistor

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SEMICONDUCTORS

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Silicon P-Channel Power MOSFET

Power MOSFET

100 V, P-channel power MOSFET

Power MOSFET

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Power MOSFET

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Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

HEXFET짰 Power MOSFET

Advanced Process Technology

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

Available in Tape and Reel

DESCRIPTION The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications beca

HEXFET Power MOSFET

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Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast Switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast Switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provi

HEXFET Power MOSFET

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Power MOSFET

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P-Channel MOSFET Transistor

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isc P-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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isc P-Channel MOSFET Transistor

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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655 MHz Low Jitter Clock Generator

PRODUCT OVERVIEW The AD9540 is Analog Devices’ first dedicated clocking product specifically designed to support the extremely stringent clocking requirements of the highest performance data converters. The device features high performance PLL (phase-locked loop) circuitry, including a flexible 2

MACHINE SCREW PAN PHILLIPS 10-32

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Computer Cable for EIA RS-232 Applications

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RS232, #24-10c, SR-PVC, O/A Foil, PVC Jkt, CMG

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Premier Supplier of Electronic Hardware

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