Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

P-Channel MOSFET Transistor

文件：334.83 Kbytes Page：2 Pages

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

HEXFET짰 Power MOSFET

Advanced Process Technology

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

isc P-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：928.06 Kbytes Page：9 Pages

Advanced Process Technology

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Silicon P-Channel Power MOSFET

P 沟道功率 MOSFET

isc P-Channel MOSFET Transistor

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

文件：311.78 Kbytes Page：11 Pages

655 MHz Low Jitter Clock Generator

PRODUCT OVERVIEW The AD9540 is Analog Devices’ first dedicated clocking product specifically designed to support the extremely stringent clocking requirements of the highest performance data converters. The device features high performance PLL (phase-locked loop) circuitry, including a flexible 2

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

Computer Cable for EIA RS-232 Applications

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RS232, #24-10c, SR-PVC, O/A Foil, PVC Jkt, CMG

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Premier Supplier of Electronic Hardware

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