3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -4A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching reg • 3.0A, 100V\n• rDS(ON) = 1.200Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

isc N-Channel MOSFET Transistor

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Power MOSFET

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Power MOSFET

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Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

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Power MOSFET

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Power MOSFET

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HEXFET짰 Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

Advanced Power MOSFET

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