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IRF9510价格
参考价格：￥11.9335
型号：IRF9510 品牌：Vishay 备注：这里有IRF9510多少钱，2024年最近7天走势，今日出价，今日竞价，IRF9510批发/采购报价，IRF9510行情走势销售排行榜，IRF9510报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF9510 | 3.0A,100V,1.200Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchingr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
IRF9510 | PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-4.0A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRF9510 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技 |  | |
IRF9510 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRF9510 | iscN-ChannelMOSFETTransistor 文件：279.8 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF9510 | PowerMOSFET 文件：158.3 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRF9510 | PowerMOSFET 文件：278.11 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-4.0A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：278.11 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：158.3 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：158.3 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰PowerMOSFET 文件：1.3565 Mbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：158.3 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：180.76 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：180.76 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：201.76 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：201.76 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：201.76 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
RS232,#24-10pr,SR-PVC,O/AFoil,PVCJkt,CMG,75Ω ProductDescription ComputerEIARS-232Cable,24AWGstranded(7x32)tinnedcopperconductors,semi-rigidPVCinsulation,10twistedpairs,overallBeldfoil®shield(100 coverage),24AWGstrandedtinnedcopperdrainwire(continued),PVCjacket. | BELDEN Belden Inc. |  | | |
RS-232,10PR#24StrTC,POins,OS,LSZHJkt,300V ProductDescription 10-Pair,24AWGstranded(7x32)TCconductors,PEinsulation,twistedpairs,overallBeldfoilshield(100coverage),24AWGstrandedTCdrainWire,LSZH jacket,FlameresistanceIEC60332-3C | BELDEN Belden Inc. | | | |
1.2GHzClockDistributionIC,PLLCore,Dividers,DelayAdjust,EightOutputs GENERALDESCRIPTION TheAD9510providesamulti-outputclockdistributionfunctionalongwithanon-chipPLLcore.Thedesignemphasizeslowjitterandphasenoisetomaximizedataconverterperformance.Otherapplicationswithdemandingphasenoiseandjitterrequirementsalsobenefitfromthis | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
Simulators. 文件：180.95 Kbytes Page：4 Pages | ETAL ETAL Group |  | | |
TCXOSpecification 文件：208.77 Kbytes Page：4 Pages | IQD IQD Frequency Products Ltd |  | |
IRF9510产品属性
- 类型
描述
- 型号
IRF9510
- 功能描述
MOSFET P-Chan 100V 4.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
|||
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
8800 |
公司只作原装正品 |
|||
VISHAY(威世) |
23+ |
TO2633 |
6000 |
||||
IR |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Vishay |
21+ |
N/A |
6000 |
深圳通 |
|||
IR |
2020+ |
TO-263 |
1200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
21+ |
TO-220AB |
3002 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
VISHAY(威世) |
23+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
IRF9510芯片相关品牌
IRF9510规格书下载地址
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IRF9510数据表相关新闻
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原装
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱：yulin522@126.com0755-8320005015817287769柯先生
2020-4-18
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