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IRF9510S价格
参考价格：￥5.5002
型号：IRF9510SPBF 品牌：VISHAY 备注：这里有IRF9510S多少钱，2026年最近7天走势，今日出价，今日竞价，IRF9510S批发/采购报价，IRF9510S行情走势销售排行榜，IRF9510S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF9510S | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
| IRF |   | |
IRF9510S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF9510S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF9510S | Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF9510S | Power MOSFET 文件：180.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF9510S | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF9510S | HEXFET® Power MOSFET | INFINEON 英飞凌 | | |
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：180.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：201.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：201.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：201.76 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r | INTERSIL | | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
| IRF | | ||
Advanced Power MOSFET FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.) | FAIRCHILD 仙童半导体 | | ||
Advanced Power MOSFET 文件：229.69 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
IRF9510S产品属性
- 类型
描述
- 型号
IRF9510S
- 功能描述
MOSFET P-Chan 100V 4.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
vishay |
23+ |
NA |
2086 |
专做原装正品,假一罚百! |
|||
IR |
SOT-263 |
425 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
Vishay |
24+ |
NA |
3673 |
进口原装正品优势供应 |
|||
IR |
24+/25+ |
159 |
原装正品现货库存价优 |
||||
IR |
2223+ |
SOT-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
IR |
25+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
IRF9510S规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
DdatasheetPDF页码索引
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