P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET

-9 A and -11 A, -150 V and -200 V rDS(on) = 0.5 Ω and 0.7 Ω Features: ■ Single pulse avalanche energy rated ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance

TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-st

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.58Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFET

FEATURES • P–CHANNEL POWER MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES

P?밅HANNEL POWER MOSFET

文件：29.24 Kbytes Page：2 Pages

-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET

MOSFETs and JFETs

Legacy Power Discretes & Modules

Simple Drive Requirements

文件：150.88 Kbytes Page：7 Pages

P-CHANNEL POWER MOSFET

FEATURES • P–CHANNEL POWER MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES

P?밅HANNEL POWER MOSFET

文件：29.24 Kbytes Page：2 Pages

Simple Drive Requirements

文件：150.88 Kbytes Page：7 Pages

P?밅HANNEL POWER MOSFET

文件：29.24 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Analog Signal Processor (ASP) for CD players

Overview The LA9240M is an analog signal processing and servo control bipolar IC designed for use in compact disc players; a compact disc player can be configured by combining this IC with a CD-DSP such as the LC78622E and LC78620E, with a small number of additional components required. Features

AUDIO LCD DRIVER IC

文件：381.01 Kbytes Page：10 Pages

AUDIO LCD DRIVER IC

文件：381.01 Kbytes Page：10 Pages