-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

isc P-Channel MOSFET Transistor

• DESCRIPTION • Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. • FEATURES • Static drain-source on-resistance: RDS(on)≤0.15Ω •

-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3

OVEN CONTROLLED CRYSTAL OSCILLTORS (OCXO)

[NDK] Main applications : Communications equipment, Measuring instruments etc. Features : 1. Excellent aging characteristics 2. Wide frequency range (9168A Series) 3. Anti-microphonic noise (9140A-BGE71, 9140A-CEE70)

OVEN CONTROLLED CRYSTAL OSCILLTORS (OCXO)

[NDK] Main applications : Communications equipment, Measuring instruments etc. Features : 1. Excellent aging characteristics 2. Wide frequency range (9168A Series) 3. Anti-microphonic noise (9140A-BGE71, 9140A-CEE70)

Excellent display resolution

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Mounting brackets

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1024x4 High-Speed Static R/W RAM

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