N-Channel Enhancement Mode MOSFET

Description The IRF8707 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =15A RDS(ON)

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and swit

30V N-Channel MOSFET

Description The UMW IRF8707TR has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power t

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ® Vos =30Vio=12A Roscn

无卤素和无铅 30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

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Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

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Fully Characterized Avalanche Voltage and Current

文件：254.47 Kbytes Page：9 Pages

Fully Characterized Avalanche Voltage and Current

文件：254.47 Kbytes Page：9 Pages

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

HEXFET

짰 Power MOSFET

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12-Channel Gamma Buffers with VCOM and Regulator

PRODUCT OVERVIEW The ADD8707 is a 12-channel integrated gamma reference with VCOM for use in LCD TV and monitor panels. The output buffers feature high current drive and low offset voltage to provide an accurate and stable gamma curve. The top six channels swing to VDD and the lower six channels

CAPTIVE PANEL SCREWS

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12-Channel Gamma Buffers with VCOM and Regulator

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High-Performance, High-Current DrMOS Power Module

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High-Performance, High-Current DrMOS Power Module

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